Doping engineering in the CdTe thin film solar cells  

作　　者：Xiao-Meng Duan Yi-Zhao Wang Feng Yan 

机构地区：[1]School for Engineering of Matter,Transport and Energy,Arizona State University,Tempe,Arizona,USA

出　　处：《cMat》2024年第3期40-53,共14页铜新材（英文）

基　　金：supported by the National Science Foundation under contract No.ECCS-2413632,MOMS-2330728,TI-2329871,DMR-2330738,CMMI-2226918,and DMREF-2323766。

摘　　要：Cadmium telluride(CdTe)thin film solar cells have gained significant attention in the photovoltaic industry due to their high efficiency and low cost.CdTe solar cells have achieved a high-power conversion efficiency of 23.1%.To further boost the device's performance,it is crucial to systematically tune the doping concen-tration and carrier concentration,which are dominated by the doping approach and the following dopant activation processes.Both Group I elements(e.g.,Cu)and Group V elements(e.g.,As)doping have demonstrated high efficiency and utilizing various doping techniques.This review provides an overview of the history of the CdTe thin film technology,doping mechanisms,doping techniques,challenges,and potential solutions to further improve device performance.

关 键 词：CDTE doping engineering solar cell 

分 类 号：TM914.4[电气工程—电力电子与电力传动]