Mini LED芯片蓝宝石衬底抛光后翘曲工艺研究  

Research on Polishing Technology of Mini LED Chip Sapphire Substrate

作　　者：刘佑芝 LIU Youzhi(Nationstar Semiconductor Technology Co.,Ltd.,Foshan 528000,China)

机构地区：[1]佛山市国星半导体技术有限公司,广东佛山528000

出　　处：《中国照明电器》2024年第11期49-52,共4页China Light & Lighting

摘　　要：随着LED在高清显示屏上的使用,Mini LED随之出现,芯片尺寸小,芯片厚度也进一步要求变薄,减薄后的厚度为50~60μm,随之而来的翘曲问题成为制造过程中的难点问题,本工艺研究通过调整粗抛工艺金刚石抛光液颗粒度,搭配CMP工艺压力,时间的调整,试验结果显示:粗抛工艺金刚石抛光液颗粒度为3μm,CMP工艺参数,压力50kg,下盘转速50r/min时间15~20min,效果最佳。With the use of LED in HD display,Mini LED appears,the chip size is small,and the chip thickness is further required to be thinner,the thickness after thinning is 50~60μm,and the ensuing warping problem becomes a difficult problem in manufacturing.This process study by adjusting the diamond polishing liquid particle size of rough polishing process and matching CMP process pressure.The test results show that the coarse polishing process diamond polishing liquid particle size is 3μm,CMP process parameters,pressure 50 kg,footwall speed 50 r/min time 15~20 min,the best effect.

关 键 词：50~60μm 厚度 翘曲 金刚石抛光液 工艺参数 

分 类 号：TG74[金属学及工艺—刀具与模具]