Improved performance by plasmon resonance in GaAs solar cells:a numerical expectation  

作　　者：Yang Wang Zhi-Yang Wan Jia-Jin Kuang Ming-Tai Wang 

机构地区：[1]Institute of Solid State Physics,Hefei Institutes of Physical Science,Chinese Academy of Sciences,Hefei 230031,China [2]University of Science and Technology of China,Hefei 230026,China [3]School of Electronic Engineering,Huainan Normal University,Huainan232000,China

出　　处：《Rare Metals》2024年第11期5712-5719,共8页稀有金属（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(Nos.11974353 and 12374018);the University Natural Science Foundation of Anhui Province(Nos.2022AH051578 and 2023AH051543)。

摘　　要：The planar heterojunction solar cells based on the GaAs films doped with gold nanoparticles(Au NPs)are investigated by a finite-difference time-domain method.The numerical results show that Au NPs effectively increase the light absorption and short-circuit current(J_(sc))of GaAs solar cells,when saving GaAs consumption by reducing film thickness.For the GaAs film of 200 nm in thickness,the presence of Au NPs boosts the device J_(sc)up to 36.94 mA·cm^(-2),1.29 times that of the counterpart device without Au NPs.In addition,one requires the pure GaAs film of 500-600 nm in thickness in order to get the absorption and J_(sc)comparable to those from the 200-nmthick GaAs film doped with Au NPs.It is revealed that the improved J_(sc)upon doping with Au NPs predominantly originates from the increased absorption of GaAs film as the result of the plasmon resonance effect of Au NPs excited by incident photons.Our results demonstrate that doping photon-harvesting layer with Au NPs is an effective strategy to prepare the solar cells with a strong spectral response and a reduced material consumption.

关 键 词：Planar heterojunction Surface plasmon resonance ABSORPTION 

分 类 号：TM914.4[电气工程—电力电子与电力传动]