Pressure-driven metallization with significant changes of structural and photoelectric properties in two-dimensional EuSbTe_(3)  

作　　者：Zhi-Kai Zhu Zhong-Yang Li Zhen Qin Yi-Ming Wang Dong Wang Xiao-Hui Zeng Fu-Yang Liu Hong-Liang Dong Qing-Yang Hu Ling-Ping Kong Hao-Zhe Liu Wen-Ge Yang Yan-Feng Guo Shuai Yan Xuan Fang Wei He Gang Liu 

机构地区：[1]State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures,MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials,and School of Resources,Environment and Materials,Guangxi University,Nanning 530004,China [2]Center for High Pressure Science and Technology Advanced Research(HPSTAR),Shanghai 201203,China [3]School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China [4]Poly Technologies,INC,Beijing 100010,China [5]ShanghaiTech Laboratory for Topological Physics,ShanghaiTech University,Shanghai 201210,China [6]Shanghai Institute of Applied Physics,Chinese Academy of Sciences,Shanghai 201204,China [7]Sch Sci,State Key Lab High Power Semicond Lasers,Changchun University Science and Technology,Changchun 130022,China [8]Shanghai Key Laboratory of Material Frontiers Research in Extreme Environments(MFree),Shanghai Advanced Research in Physical Sciences(SHARPS),Shanghai 201203,China

出　　处：《Rare Metals》2024年第11期5943-5952,共10页稀有金属（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(No.U2130116);Shanghai Key Laboratory of Material Frontiers Research in Extreme Environments(MFree),China(No.22dz2260800);Shanghai Science and Technology Committee,China(No.22JC1410300)。

摘　　要：Two-dimensional materials are widely considered to be highly promising for the development of photodetectors.To improve the performance of these devices,researchers often employ techniques such as defect engineering.Herein,pressure is employed as a clean and novel means to manipulate the structural and physical properties of EuSbTe_(3),an emerging two-dimensional semiconductor.The experimental results demonstrate that the structural phase transformation of EuSbTe_(3)occurs under pressure,with an increase in infrared reflectivity,a band gap closure,and a metallization at pressures.Combined with X-ray diffraction(XRD)and Raman characterizations,it is evident that the pressure-driven transition from semiconductor Pmmn phase to metallic Cmcm phase causes the disappearance of the charge density wave.Furthermore,at a mild pressure,approximately 2 GPa,the maximum photocurrent of EuSbTe_(3)is three times higher than that at ambient condition,suggesting an untapped potential for various practical applications.

关 键 词：PRESSURE Phase transition METALLIZATION PHOTORESPONSE Two-dimensional(2D) 

分 类 号：TB34[一般工业技术—材料科学与工程]