基于硅波导分布布拉格取样光栅的四通道Ⅲ-V/Si激光器阵列  

A Four-channelⅢ-V/Si Laser Array Based on Silicon Waveguide Distributed Bragg Sampled Grating

作　　者：贾艳青 王海玲[2,4] 孟然哲 张建心 周旭彦[4] JIA Yanqing;WANG Hailing;MENG Ranzhe;ZHANG Jianxin;ZHOU Xuyan(College of Physics and Electronic Science,Shandong Normal University,Jinan 250358,China;Laboratory of Solid State Optoelectronics Information Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;School of Physics and Electronic Information,Weifang University,Weifang 261061,China;Weifang Academy of Advanced Opto-electronic Circuits,Weifang 261021,China)

机构地区：[1]山东师范大学物理与电子科学学院,济南250358 [2]中国科学院半导体研究所固态光电信息技术重点实验室,北京100083 [3]潍坊学院物理与电子信息学院,潍坊261061 [4]潍坊先进光电芯片研究院,潍坊261021

出　　处：《光子学报》2024年第11期104-114,共11页Acta Photonica Sinica

基　　金：国家重点研发计划(No.2022YFB2803100)。

摘　　要：提出了一种波长间隔0.8 nm的四通道Ⅲ-V/Si激光器阵列。在四通道硅波导表面设计了两组分布布拉格取样光栅,分别作为前反射镜和后反射镜,形成Ⅲ-V/Si激光器的谐振腔。优化设计分布布拉格取样光栅的参数,选择四个通道的取样光栅的一阶子光栅对应的波长进行振荡和输出。采用直接晶片键合技术,将图案化的绝缘体上硅晶片和Ⅲ-V外延晶片非集成在一起,实现了Ⅲ-V波导与硅波导的自对准和高效倏逝波耦合。在室温下连续波条件下,制备的四通道Ⅲ-V/Si激光器阵列的硅波导输出功率均大于0.7 mW@60 mA,阈值电流均小于25 mA,激射波长分别为1 569.64 nm、1 570.45 nm、1 571.27 nm和1 572.08 nm,波长间距为0.8 nm±0.2 nm。这种四通道Ⅲ-V/Si激光器阵列经优化后可应用于密集波分复用硅光学系统。In modern optical communication,Dense Wavelength Division Multiplexing(DWDM)technology provides the possibility of simultaneous transmission of multiple signals and improvement of information transmission capacity,and the multi-wavelength monolithic integrated silicon-based laser arrays with small wavelength intervals in a dense DWDM silicon-based optical system has become a research hotspot and a difficult point.However,traditional multi-wavelength monolithic integrated silicon-based laser array with 0.8 nm wavelength spacing based on first-order uniform gratings are difficult to achieve due to the limitation of sub nanometer processing accuracy.In this paper,a four-channel monolithic integrated Ⅲ-V/Si laser array with 0.8 nm wavelength spacing based on silicon waveguide distributed Bragg sampling gratings is demonstrated.Firstly,it is proposed to design and manufacture a set of distributed Bragg sampling gratings at both ends of the silicon waveguides in four channels,as front and rear mirrors,to form the resonant cavity of each channel Ⅲ-V/Si laser.Secondly,by changing the micro-meter level sampling period of the silicon waveguide distributed Bragg sampling grating of four channels,four different wavelengths corresponding to the+1st sub-gratings of the four channel silicon waveguide distributed Bragg sampling gratings are selected to oscillate in the resonant cavity and emit.In the proposed laser,the silicon waveguide′s width,height,and ridge etch depth are fixed as 1.5μm,0.34μm,and 0.22μm,respectively.The Ⅲ-V layer stack has eight strained InAlGaAs Quantum Wells(QWs)with graded index separate confinement hetero-structure layers.The front and rear mirrors′length are set 100μm and 400μm,respectively.In the simulation design,the etching depth of the seed grating of the Bragg sampling grating of the silicon waveguide distribution of each channel is set to 30 nm,the duty cycle is 50%,the period of the seed gratingΛ0 is 266 nm,and the other parameters are the same as those in 1.1 of this paper,and t

关 键 词：取样光栅 分布布拉格反射 直接晶片键合 硅基激光器阵列 异质集成 倏逝波耦合 

分 类 号：TN248.4[电子电信—物理电子学]