太赫兹波化合物半导体材料研究进展  

Development of compound semiconductor materials at terahertz wave band

作　　者：时翔[1] SHI Xiang(School of Computer Science and Information Engineering,Changzhou Institute of Technology,Changzhou213032,Jiangsu Province,China)

机构地区：[1]常州工学院计算机信息工程学院,江苏常州213032

出　　处：《电子元件与材料》2024年第10期1167-1180,共14页Electronic Components And Materials

摘　　要：继微波、毫米波技术之后,太赫兹(THz)波技术已被证实在下一代探测与通信领域具有重要的应用前景。作为微波、毫米波芯片衬底材料主流的Ⅲ-Ⅴ族化合物半导体材料,正逐渐成为太赫兹单片集成电路(TMIC)材料科学的研究热点。本文介绍了以砷化镓(GaAs)、磷化铟(InP)、氮化镓(GaN)为代表的化合物半导体材料在TMIC制造领域的研究与应用进展,分析了国内外研究现状与未来发展趋势。Following microwave and millimeter wave technologies,terahertz(THz)wave technology has been proven to have important application prospects in the next generation of detection and communication fields.As the mainstream substrate material for the microwave and millimeter wave chips,Ⅲ-Ⅴcompound semiconductor materials becomes the research hotspot in THz monolithic integrated circuit(TMIC)material science.In this article,the recent research,and application progress of compound semiconductor materials represented by Gallium Arsenide(GaAs),Indium Phosphide(InP),and Gallium Nitride(GaN)in the field of TMIC manufacturing are introduced,and the current situation and future development trends are analyzed domestically and internationally.

关 键 词：太赫兹 化合物半导体 综述 集成电路 固态技术 

分 类 号：TN492[电子电信—微电子学与固体电子学]