Ce^(4+)掺杂调节晶格畸变优化Bi_(4)Ti_(2.95)W_(0.05)O_(12)陶瓷的电学性能  

Optimization of electrical properties of Bi_(4)Ti_(2.95)W_(0.05)O_(12)ceramics by modulation of lattice distortion with Ce^(4+)doping

作　　者：强晓永 刘天天 陈涛 陈阳 王松林 QIANG Xiaoyong;LIU Tiantian;CHEN Tao;CHEN Yang;WANG Songlin(College of Electronic Information and Automation,Tianjin University of Science&Technology,Tianjin300222,China)

机构地区：[1]天津科技大学电子信息与自动化学院,天津300222

出　　处：《电子元件与材料》2024年第10期1214-1220,共7页Electronic Components And Materials

基　　金：国家自然科学基金(61971308)。

摘　　要：采用固相反应法成功制备了Bi_(4)Ti_(2.95)W_(0.05)O_(12)-x%CeO_(2)(掺杂量x=0,0.02,0.05)高温无铅压电陶瓷。研究发现Ce^(4+)掺杂量的变化对陶瓷晶格畸变程度具有调节作用。系统地研究了这种调节作用对陶瓷微观形貌、压电性能和介电性能的影响。XRD和扫描电镜测试结果表明,适量的Ce^(4+)掺杂能有效地在压电陶瓷内部引发适度的晶格畸变,进而改善了陶瓷的压电和介电性能,同时降低了介电损耗。当掺杂量x为0.02时,样品展现出最佳性能:d_(33)=8pC/N,T_(c)=618℃,tanδ=0.09%,Q_(m)=3364。High-temperature lead-free piezoelectric ceramics of Bi_(4)Ti_(2.95)W_(0.05)O_(12)-x%CeO_(2)(x=0,0.02,0.05)were prepared using the conventional solid-state method.The effects of the modulating the degree of ceramic lattice distortion by varying the amount of Ce^(4+)doping on the microstructure and the piezoelectric and dielectric properties of the ceramics were systematically investigated.The XRD and SEM results showed that an appropriate amount of Ce^(4+)doping induced a suitable degree of lattice distortion in the piezoelectric ceramics,thereby their piezoelectric and dielectric properties were enhanced and dielectric loss was reduced.Notably,at a doping level of x=0.02,the sample exhibited optimal performance,with a d_(33)of 8pC/N,T_(c) of 618℃,tanδof 0.09%,and Q_(m) of 3364.These results strongly suggest that this material has significant potential for high-level sensing applications.

关 键 词：压电陶瓷 掺杂 晶格畸变 电学性能 微观结构 

分 类 号：TQ174.1[化学工程—陶瓷工业]