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作 者:Sami Ur Rahman Yong-Hui Song Zhen-Yu Ma Xiao-Lin Tai Bai-Sheng Zhu Yi-Chen Yin Li-Zhe Feng Jing-Ming Hao Guan-Jie Ding Kuang-Hui Song Ya-Lan Hu Tieqiang Li Jixian Xu Hong-Bin Yao
机构地区:[1]Hefei National Research Center for Physical Sciences at the Microscale,University of Science and Technology of China,Hefei 230026,China [2]Department of Applied Chemistry,University of Science and Technology of China,Hefei 230026,China [3]Department of Material Science and Engineering,University of Science and Technology of China,Hefei 230026,China
出 处:《Nano Research》2024年第12期10302-10308,共7页纳米研究(英文版)
基 金:support from the National Natural Science Foundation of China(Nos.22325505,52073271,and 22305236);the USTC Research Funds of the Double First-Class Initiative(No.YD2060002034);the Collaborative Innovation Program of Hefei Science Center,CAS(No.2022HSC-CIP018);the China Postdoctoral Science Foundation(Nos.2023M733375 and 2023T160619).
摘 要:Lead sulfide quantum dots(PbS QDs)are promising candidates for high-performance solar cells due to their tunable bandgaps and low-cost solution processing.However,low carrier mobility and numerous surface defects restrict the performance of the fabricated solar cells.Herein,we report the synthesis of novel PbS-perovskite core-shell QDs to solve the low carrier mobility problem of PbS QDs via a facile hot injection method.CsPbI_(2)Br shell enabled strain-free epitaxial growth on the surface of PbS QDs because of 98%lattice match.Our results demonstrate a significant improvement in the photoluminescence and stability of the synthesized PbS-CsPbI_(2)Br QDs upon shell formation,attributed to the effective suppression of surface defects by the epitaxial shell of CsPbI_(2)Br.As a result,the obtained solar cell based on PbS-CsPbI_(2)Br core-shell QD exhibits a power conversion efficiency(PCE)of 8.43%,two times higher than that of pristine PbS QDs.Overall,the construction of PbS-CsPbI_(2)Br core-shell structures represent a promising strategy for advancing the performance of PbS QDs-based optoelectronic devices.
关 键 词:lead chalcogenide perovskites CORE-SHELL epitaxial growth solar cell
分 类 号:TM914.4[电气工程—电力电子与电力传动]
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