A record-breaking low turn-on voltage blue QLED via reducing built-in potential  

作　　者：Run Wang Hengyang Xiang Chi Zhang Hongyang Li Yuqin Su Qi Chen Qinye Bao Gaoran Li Haibo Zeng 

机构地区：[1]MIIT Key Laboratory of Advanced Display Materials and Devices,Institute of Optoelectronics and Nanomaterials,College of Materials Science and Engineering,Nanjing University of Science and Technology,Nanjing 210094,China [2]i-Lab,CAS Center for Excellence in Nanoscience,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China [3]School of Physics and Electronic Science East China Normal University,Shanghai 200241,China

出　　处：《Nano Research》2024年第12期10446-10452,共7页纳米研究（英文版）

基　　金：support was from the National Key Research and Development Program of China(No.2022YFB3606502);the National Natural Science Foundation of China(Nos.52131304,62004101,62261160392,and 22022205);Jiangsu graduate and practice innovation program(No.KYCX23_0456);the Fundamental Research Funds for the Central Universities(No.30920041117).

摘　　要：Developing light-emitting diodes(LEDs)with the merits of low driving and high brightness has always been attractive.Considering the carrier dynamic process under electroexcitation,the built-in potential(V_(bi))represents the moment that the photons start to be produced in a LED.However,it has not been carefully studied and discussed.Here,we observed that by employing an interface regulation strategy to enhance hole concentration,the V_(bi)of quantum dot LEDs(QLEDs)can be reduced.Combined with the characterization methods of Mott–Schottky(MS)and scanning Kelvin probe microscopy(SKPM),the key indicator of V_(bi)on driving voltage for QLEDs is confirmed.Profiting from the reduction of V_(bi),a record-breaking ultra-low turn-on voltage of 2.2 V(@1 cd/m^(2))is achieved in a blue QLED.The blue QLED shows an advantage of high brightness under low driving voltages,i.e.,1000 cd/m^(2)@3.10 V and 5000 cd/m^(2)@3.88 V.This work proposes a reference strategy to predict and analyze the driving voltage issue,which is beneficial to facilitating the development of low-driving QLEDs in the future.

关 键 词：built-in potential low turn-on voltage high brightness quantum dot light-emitting diodes(QLEDs) 

分 类 号：TN31[电子电信—物理电子学]