Revealing the origin of the photo-instability to improve the performance of PbS quantum dot solar  

作　　者：Chunyan Wu Jinpeng Yang Shuo Ding Tengzuo Huang Tao Sun Lei Qian Chaoyu Xiang 

机构地区：[1]Laboratory of Advanced Nano-Optoelectronic Materials and Devices,Qianwan Institute of CNITECH,Ningbo 315336,China [2]Laboratory of Advanced Nano-Optoelectronic Materials and Devices,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,China [3]Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices,Ningbo Institute of Materials Technology&Engineering,Chinese Academy of Sciences,Ningbo 315201,China [4]International Joint Research Center of China for Optoelectronic and Energy Materials,Energy Research Institute,Yunnan University,Kunming 650091,China [5]Department of Mechanical,Materials and Manufacturing Engineering,University of Nottingham Ningbo China,Ningbo 315100,China

出　　处：《Nano Research》2024年第12期10644-10648,共5页纳米研究（英文版）

基　　金：supported by the National Key Research and Development Program of China(No.2022YFB3602902);Zhejiang Provincial Natural Science Foundation of China(No.LR21F050001);YONGJIANG Talent Introduction Program(No.2021A-038-B);Ningbo 3315 Program(No.2020A01-B);Zhejiang Innovation and Entrepreneurship Team(No.2021R01003);Science and Technology Innovation 2025 Major Project of Ningbo(No.2022Z085);supported by the Flexible Electronics Zhejiang Province Key Laboratory fund project(No.2022FE002)and the Key projects of National Natural Science Foundation of China(No.62234004);dedicated in memory of Dr.Lei Qian,who was a great mentor,colleague,and friend.He made many significant scientific contributions during his highly productive career and will be remembered.

摘　　要：Stability under light is critical for lead sulfide quantum dots(PbS QDs)in solar cell applications.To improve the stability of PbS QDs solar cells,the influence of the light illumination on the performance of the as-prepared PbS QDs solar cells was carefully investigated.Combined with X-ray and ultraviolet photoelectron spectroscopies,it was revealed that the 1,2-ethanedithiol(EDT)ligands of the hole transport p-type PbS QDs reacted with the ligands of the PbS QDs active layer under light illumination.The reaction not only undermines the n-type characteristics of the active layer,but also increases the number of defects,leading to a serious deterioration in device performance.An interface layer was introduced to block the EDT penetration to avoid this issue,significantly improving the stability of the device under light irradiation.Moreover,the separation of carriers was also enhanced due to the better matching the energy level of the interface layer.The device with an interface layer yielded a power conversion efficiency of 12.55%and sustained to a long time light illumination.

关 键 词：solar cell lead sulfide quantum dots(PbS QDs) photo-instability INTERLAYER lght illumination 

分 类 号：TM914.4[电气工程—电力电子与电力传动]