One-pot synthesis of Cu:InP multishell quantum dots for nearinfrared light-emitting devices  

作　　者：Pan Huang Xiaonan Liu Xiao Liu Jing Wei Fangze Liu Hongbo Li 

机构地区：[1]Advanced Research Institute of Multidisciplinary Sciences,Beijing Institute of Technology,Zhuhai 519088,China [2]Advanced Research Institute of Multidisciplinary Sciences,Beijing Institute of Technology,Beijing 100081,China [3]Beijing Key Laboratory of Construction-Tailorable Advanced Functional Materials and Green Applications,Experimental Center of Advanced Materials,School of Materials Science and Engineering,Beijing Institute of Technology,Beijing 100081,China

出　　处：《Nano Research》2024年第12期10655-10660,共6页纳米研究（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.22179009,U22A2072,22105018,52372135,and 22379017).

摘　　要：InP quantum dots(QDs)are promising heavy-metal-free materials for next-generation solid-state lighting,covering from visible to near-infrared(NIR)range.Compared with the rapid development of visible InP QDs,the synthesis of high-performance NIR InP QDs remains to be solved.In this work,we report a simple one-pot synthesis of NIR InP QDs by controlling the Cu doping and designing a multishell structure.By replacing the conventional highly reactive phosphorus precursor with a slightly less reactive and low-cost ammonia phosphorus precursor,the nucleation process is effectively regulated for efficient Cu doping.In addition,the epitaxial growth of the ZnSe/ZnS shell further improves the stability and optical properties of InP QDs.Therefore,the synthesized Cu:InP/ZnSe/ZnS QDs have a photoluminescence quantum yield of 70%centered at 833 nm.The NIR InP lightemitting diodes exhibit a maximum radiance of 3.1 W·sr^(-1)·m^(-2)and a peak external quantum efficiency of 2.71%centered at 864 nm.

关 键 词：NEAR-INFRARED InP quantum dots CORE-SHELL light-emitting diodes 

分 类 号：TN21[电子电信—物理电子学]