Cu_(2)O柱阵列的Cu还原制备与表征  

Preparation and Characterization of Cu_(2)O Column Array by Cu Reduction

作　　者：王佳伟[1] 韦江 陈威 王日昕[1] 刘秋香[1] WANG Jiawei;WEI Jiang;CHEN Wei;WANG Rixin;LIU Qiuxiang(Jiangxi Key Laboratory of Advanced Copper-based Materials,Institute of Applied Physics,Jiangxi Academy of Science,330096,Nanchang,PRC)

机构地区：[1]铜基新材料江西省重点实验室,江西省科学院应用物理研究所,南昌330096

出　　处：《江西科学》2024年第6期1216-1219,共4页Jiangxi Science

基　　金：江西省重点研发计划项目(20203BBE53031);江西省科学院重点研发计划项目(2023YSBG21014,2023YSBG22018)。

摘　　要：Cu_(2)O是一类重要的p型半导体材料,在气敏、光伏等领域具有广阔的应用前景。通过热氧化法,在Cu片上先制备CuO纳米线阵列为前驱体,然后再在N_(2)氛围中加热,通过Cu还原制备Cu_(2)O柱阵列,利用XRD、SEM对Cu_(2)O柱阵列结构进行表征。分析发现,只需控制气氛、温度和时长等,就能控制好前驱体CuO纳米线的长度和粒径,进而调控Cu_(2)O柱阵列的长径比等,该方法简单,对环境无污染,为制备Cu_(2)O阵列结构提供了新方法。Cuprous oxide is an important p-type semiconductor material. It has broadapplication prospect in the field of gas-sensitive, photovoltaic devices. In this study, CuOnanowire arrays were prepared on Cu sheets by thermal oxidation method. Then, Cu_(2)Ocolumn arrays were prepared by Cu reduction when the CuO nanowire arrays were heated inN_(2). The structure and morphology of Cu_(2)O column arrays were characterized by XRD andSEM, respectively. The analysis revealed that the length-diameter ratio of the precursorCuO nanowires can be controlled merely by controlling factors such as the atmosphere,temperature and time of heating, which in turn allows for the regulation of the lengthdiameterratio of Cu_(2)O column arrays. This method is simple and environmentally friendly,providing a new approach for the fabrication of Cu_(2)O array structure.

关 键 词：CuO纳米线阵列 Cu还原 Cu_(2)O柱阵列 

分 类 号：TN304.2[电子电信—物理电子学]