先进氢化工艺在SiGe/Si太阳能电池上的应用  

Advance Hydrogen Passivation Process Apply on SiGe/Si Tandem Device

作　　者：雷阜锟 LEI Fukun(University of New South Wales,2052,Sydney,Australia)

机构地区：[1]新南威尔士大学,澳大利亚悉尼2052

出　　处：《江西科学》2024年第6期1237-1241,共5页Jiangxi Science

摘　　要：晶格失配是单晶硅与Ⅲ-Ⅴ/Si叠层太阳能电池的一个重要问题,因为原子大小的差异,在界面上会产生孤岛和错配位错等缺陷。加入一个Si_(1-X)Ge_(X)缓冲层可以使衔接的原子从Si变为Ge,从而有效缓解该问题。然而,即便加入Si_(1-X)Ge_(X)缓冲层,Si_(1-X)Ge_(X)缓冲层之间仍可能存在悬挂键和位错的情况,导致显著的复合损失。对此,为了减少缓冲层和基底的缺陷,从而提高电池的性能,将先进的氢钝化工艺应用于中间加入了Si_(1-X)Ge_(X)分级缓冲层的、在Si上生长的Si_(1-X)Ge_(X)电池中。并将通过PECVD技术沉积的氢化氮化硅层(H:SiNx)作为氢源和抗反射涂层应用于具有4种不同Ge浓度(78%、82%、85%和88%)的Si Ge/Si电池上。经过30s的累计激光处理后,SiGe电池的Voc和效率(78%、82%和85%)分别提高了2%~4%REL(相当于6~12m V)和5%~17%REL。以上结果证明了氢化钝化在修复Si_(1-X)Ge_(X)缓冲层和SiGe基底缺陷方面的有效性,也为先进的氢化技术在其他串联结构上的广泛应用提供了新的可能。Due to the formation of islanding and misfit dislocations at the interface, latticemismatch is an important concern for monolithic III-/Si tandem solar cells. The applicationof Si_(1-X)Ge_(X) buffer layers has shown potential in reducing the lattice-mismatch between Siand III-V materials. Significant recombination losses could be brought on by dislocationsand dangling bonds among the Si_(1-X)Ge_(X) buffer layers, though. In order to decrease thebuffer layer and base region defects and hence enhance the performance of Si_(1-X)Ge_(X) cellsgrown on Si with Si_(1-X)Ge_(X) graded buffer layers in between, we employ an improvedhydrogenation technique in this work. Using PECVD, SiNx has been applied to SiGe/Si cellswith four distinct Ge concentrations (78%, 82%, 85% and 88%), serving as both an antireflectioncoating and a source of hydrogen. Voc and efficiency of SiGe cells, with 78%,82% and 85% Ge concentration, after 30 seconds of cumulative laser irradiation, wereenhanced by 2%~4%REL (6~12 mV) and 5%~17%REL, respectively. These findingsshow that hydrogenation passivation works well on Si_(1-X)Ge_(X) buffer layers and SiGe basedefects. They also point to potential new uses for the advanced hydrogenation method onother tandem devices.

关 键 词：锗 氢 激光加工 钝化 叠层 

分 类 号：TB34[一般工业技术—材料科学与工程]