模拟集成电路工艺技术研究进展  

Researech Progress on Manufacturing Technology for Analog Integrated Circuits

作　　者：付晓君 FU Xiaojun(National Key Laboratory of Integrated Circuits and Microsystems,Chongqing 401332,P.R.China;CETC Academy of Chips Technology,Chongqing 401332,P.R.China)

机构地区：[1]集成电路与微系统全国重点实验室,重庆401332 [2]中国电科芯片技术研究院,重庆401332

出　　处：《微电子学》2024年第4期523-541,共19页Microelectronics

基　　金：国家自然科学基金资助项目(12105252);国防科技重点实验室稳定支持基金资助项目(JZJJXN20230004-11)。

摘　　要：集成电路工艺是芯片制造的关键技术,也是推动芯片性能提升的主要动力。模拟集成电路作为集成电路的重要组成部分,是电子系统与自然界模拟信息交换的桥梁,具有应用范围广、产品门类多、工艺耦合度高等特点,因此模拟集成电路工艺技术呈现了高压、高速、高精度或多样化的器件集成等特征,并结合不同产品需求、不同工艺特征进行综合折中形成独特的工艺发展路径。本文综述了模拟集成电路工艺技术的发展历程及研究进展,系统分析了业界主流的互补双极、BiCMOS、BCD及RF/混合信号CMOS工艺的主要特征、技术水平与发展趋势,从而为模拟集成电路工艺选用和开发提供参考。Manufacturing technology is the foundation and driving force for improving the overall performance of integrated circuits(ICs).Analog ICs,which form the bridge between electronic systems and analog information,are characterized by high design complexity,a wide application range,a long application cycle,and low substitutability.Therefore,technologies for the manufacturing analog ICs require high voltage,high speed,high precision,and diversified device integration,combining different product requirements and process characteristics to form a unique development path for the industry.In this study,advances in the manufacturing technology for modern analog ICs are reviewed.The technical features and developing trends of complementary bipolar,BiCMOS,BCD,and RF/mixed-signal CMOS processes from industry’s leading integrated device manufacturers and foundries are analyzed in detail to provide a reference for the research and development of high-performance analog ICs.

关 键 词：模拟集成电路 制造工艺 SiGe BiCMOS BCD RF CMOS 

分 类 号：TN43[电子电信—微电子学与固体电子学]