面向GaN驱动的高噪声抗扰度电平位移电路  

High Noise Immunity Level Shifter for GaN Driver

作　　者：邵瑞洁 吴之久 明鑫[1,2] 王卓[1] 张波[1,2] SHAO Ruijie;WU Zhijiu;MING Xin;WANG Zhuo;ZHANG Bo(State Key Lab.of Elec.Thin Films and Integr.Dev.,Univ.of Elec.Sci.and Technol.of China,Chengdu 610054,P.R.China;Shenzhen Institute for Advanced Study,UESTC,Shenzhen,Guangdong 518000,P.R.China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054 [2]电子科技大学(深圳)高等研究院,广东深圳518000

出　　处：《微电子学》2024年第4期564-569,共6页Microelectronics

基　　金：国家重点研发计划(2022YFB3604204);国家自然科学基金(61974019);四川省科技计划资助(2020YFJ0002)。

摘　　要：在高压GaN半桥栅驱动系统应用中,需要通过电平位移电路来实现信号在不同电压域之间的转换。为了保证转换过程中的信号完整性,设计了一种面向GaN驱动的高噪声抗扰度电平位移电路。在半桥开关节点电压发生快速切换时,针对电路内部大寄生电容节点充放电导致输出误翻转的问题,采用交叉耦合方式抑制共模噪声电流传递,实现了较高的噪声抗扰度。另外,采用电压-电流转换技术提高了抗负压能力。基于0.8μm 600 V高压BCD工艺进行电路设计。仿真结果表明,该电平位移电路平均传输延时为5.62 ns,dV/dt噪声抗扰度为200 V/ns,在6 V电源电压下允许开关节点负压低至-4.5 V。In the high-voltage GaN half-bridge gate driver,a level shifter is required to convert signals between different voltage domains.To maintain signal integrity during the conversion process,this study proposes a level shifter with high noise immunity for a GaN driver.During fast switching of the half-bridge switch node voltage,aiming at the output signal malfunction caused by the charging and discharging of the large parasitic capacitance nodes within the circuit,high noise immunity was achieved via cross-coupling to suppress the common mode noise current transmission.In addition,the negative voltage tolerance was improved using the voltage-to-current conversion technique.The circuit was designed in a 0.8μm 600 V high voltage BCD process.The simulation results showed that the level shifter had an average propagation of 5.48 ns,a d V/d t noise immunity of 200 V/ns,and an allowable switch node negative voltage swing to-4.5 V at a 6 V supply voltage.

关 键 词：GaN半桥驱动 电平位移电路 高噪声抗扰度 

分 类 号：TN402[电子电信—微电子学与固体电子学]