正温度系数跨导基准电路及其应用实例  

Positive Temperature Coefficient Transconductance Reference Circuit and its Applications

作　　者：张然 ZHANG Ran(Southwest China Institute of Electronic Technology,Chengdu 610036,P.R.China)

机构地区：[1]中国西南电子技术研究所,成都610036

出　　处：《微电子学》2024年第4期597-603,共7页Microelectronics

摘　　要：基于130 nm双极型晶体管与互补金属氧化物半导体(Bipolar and Complementary Metal Oxide Semiconductor,BiCMOS)工艺,提出了一款由跨导参考源与温度系数校准电路构成的,应用于超低增益温漂放大器的正温度系数跨导基准电路。提出的正温度系数跨导基准电路被应用于K频段4通道相控阵接收芯片中,根据接收芯片射频信号链路中各级放大器负载阻抗的温漂特性,设置合适的正温度系数跨导的参考电流,确保各级放大器以及射频信号链路的增益在工作温度发生变化时维持在极低的变化范围内。芯片实测结果表明:含四级有源放大器的接收芯片射频信号链路在中心频率19 GHz处的常温增益等于22.8 dB;在17 G至21 GHz工作频段内,-45℃至85℃温度下,最大增益温漂小于2.9 dB。芯片占用面积3.5 mm×2.5 mm。This study proposes a positive temperature coefficient transconductance reference circuit via 130-nm bipolar and complementary metal oxide semiconductor technology using a transconductance reference and a temperature coefficient calibration circuit for ultra-low gain temperature drift amplifier applications.The proposed positive temperature coefficient transconductance reference circuit was then applied to a K-band 4-Channel phased array receiver chip,in which several reference currents with a proper positive temperature coefficient transconductance were selected,based on the temperature properties of the load impedance in each amplifier stage in the radio frequency signal chain of the receiver chip,to ensure that the gain of each amplifier stage and the radio frequency signal chain remains within an ultra-low variation range when the operating temperature changes.The chip-level test results showed that the radio frequency signal chain of the receiver chip comprised four amplifier stages and achieved 22.8 dB room temperature gain at a center frequency of 19 GHz.Within the working bandwidth of 17 and 21 GHz,the maximum gain temperature drift was less than 2.9 dB from-45℃to 85℃temperature.The chip occupied an area of 3.5×2.5 mm.

关 键 词：基准 超低增益温漂 正温度系数跨导 BICMOS 

分 类 号：TN432[电子电信—微电子学与固体电子学]