基于Cs_(2)PtI_(6)的无铅双钙钛矿太阳电池性能数值研究  

Numerical study on performance of lead-free double perovskite solar cells based on Cs_(2)PtI_(6)

作　　者：甘永进[1] 邱贵新 覃斌毅[3] 宁维莲 GAN Yongjin;QIU Guixin;QIN Binyi;NING Weilian(Center for Applied Mathematics of Guangxi,Yulin Normal University,Yulin Guangxi 537000,China;Office of the Party Committee(President),Guangxi Minzu Normal University,Chongzuo Guangxi 532200,China;Guangxi Colleges and Universities Key Lab of Complex System Optimization and Big Data Processing,Yulin Normal University,Yulin Guangxi 537000,China;School of Physics and Telecommunication Engineering,Yulin Normal University,Yulin Guangxi 537000,China)

机构地区：[1]玉林师范学院广西应用数学中心,广西玉林537000 [2]广西民族师范学院党委(校长)办公室,广西崇左532200 [3]玉林师范学院广西高校复杂系统优化与大数据处理重点实验室,广西玉林573000 [4]玉林师范学院物理与电信工程学院,广西玉林537000

出　　处：《电源技术》2024年第12期2517-2527,共11页Chinese Journal of Power Sources

基　　金：广西高校中青年教师科研基础能力提升项目(2022KY0580)。

摘　　要：提出结构为FTO/SnO_(2)/Cs_(2)PtI_(6)/CuInS_(2)-QD/Au以及FTO/SnO_(2)/Cs_(2)PtI_(6)/GaAs-QD/Au的无铅Cs_(2)PtI_(6)基新型钙钛矿太阳电池。以Cs_(2)PtI_(6)双钙钛矿材料为光活性层,SnO_(2)为电子传输层,CuInS_(2)-QD和GaAs-QD分别为空穴传输层构建器件结构。数值仿真结果表明,当背电极材料为Au,Cs_(2)PtI_(6)层厚度和缺陷态密度分别设置为800 nm和1016 cm^(−3),HTL掺杂浓度设置为1018 cm^(−3),Cs_(2)PtI_(6)层与HTL界面缺陷态密度设置为1012 cm^(−3),工作温度设置为300 K时,结构为FTO/SnO_(2)/Cs_(2)PtI_(6)/CuInS_(2)-QD/Au的电池器件输出特性为:Voc=1.16 V,Jsc=31.66 mA/cm^(2),FF=77.73%,PCE=28.52%。而结构为FTO/SnO_(2)/Cs_(2)PtI_(6)/GaAs-QD/Au的电池器件输出特性为:Voc=1.14 V,Jsc=31.66 mA/cm^(2),FF=81.36%,PCE=29.43%。与之前同类型的研究相比,所构建的Cs_(2)PtI_(6)基双钙钛矿太阳电池性能更佳,为新型无铅、高效的钙钛矿太阳电池的研究提供了一定的借鉴思路。Two novel lead-free Cs_(2)PtI_(6)-based perovskite solar cells with the structures of FTO/SnO_(2)/Cs_(2)PtI_(6)/CuInS_(2)-QD/Au and FTO/SnO_(2)/Cs_(2)PtI_(6)/GaAs-QD/Au were proposed.The device structures were constructed using Cs_(2)PtI_(6)double perovskite material as the photoactive layer,SnO_(2)as the electron transport layer,CuInS_(2)-QD and GaAs-QD as the hole transport layers,respectively.The numerical simulation results show that,when Au is selected as the back electrode,the thickness and defect density of Cs_(2)PtI_(6)are set to 800 nm and 1016 cm^(−3),the doping density of HTL is set to 1018 cm^(−3),the defect density of interface between Cs_(2)PtI_(6)and HTL is set to 1012 cm^(−3),and the working temperature is set to 300 K,the output characteristics of the device with the structure of FTO/SnO_(2)/Cs_(2)PtI_(6)/CuInS_(2)-QD/Au are:Voc=1.16 V,Jsc=31.66 mA/cm^(2),FF=77.73%,PCE=28.52%,and the output characteristics of the device with the structure of FTO/SnO_(2)/Cs_(2)PtI_(6)/GaAs-QD/Au are:Voc=1.14 V,Jsc=31.66 mA/cm^(2),FF=81.36%,PCE=29.43%.Compared with the previous studies of the same type,the Cs_(2)PtI_(6)-based double perovskite solar cells constructed in this paper have better performance,providing a certain reference for the research of novel lead-free and efficient perovskite solar cells.

关 键 词：钙钛矿太阳电池 数值仿真 背电极 厚度 缺陷态密度 温度 

分 类 号：TM914[电气工程—电力电子与电力传动]