Broadband low noise amplifier design based on self-bias  

作　　者：Yang Xiaofeng Dong Pingyan 

机构地区：[1]School of Electronic Engineering,Xi'an University of Posts and Telecommunications,Xi'an 710121,China

出　　处：《The Journal of China Universities of Posts and Telecommunications》2024年第5期64-70,共7页中国邮电高校学报（英文版）

摘　　要：A 20 GHz-24 GHz three-stage low noise amplifier(LNA) was implemented using the GaAs pseudomorphic high electron mobility transistor(PHEMT) process. The schematic design and optimization of the LNA were carried out using advanced design system(ADS). The three-stage series structure is used to increase the gain of the amplifier. Additionally, a self-biasing network and negative feedback circuit can expand the bandwidth while increasing the stability of the circuit and obtaining better input matching and noise. The test results show that the gain in the 20 GHz-24 GHz band is greater than 20 dB, the noise figure(NF) is 2.1 dB, and the input and output reflection coefficients are less than-10 dB, which meets the design requirements. The amplifier serves a wide range of applications, including wireless communications, radar systems, satellite communications, and other areas that require high-frequency amplification to enhance system performance and sensitivity.

关 键 词：self-bias negative feedback low noise 

分 类 号：TN722.3[电子电信—电路与系统]