Van der Waals epitaxial growth of single-crystal molecular film  

作　　者：Lixin Liu Penglai Gong Kailang Liu Bingrong Huang Zhihao Zhang Yingshuang Fu Yu Wu Yinghe Zhao Meihui Wang Yongshan Xu Huiqiao Li Tianyou Zhai 

机构地区：[1]State Key Laboratory of Materials Processing and Die&Mould Technology,School of Materials Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China [2]Key Laboratory of Optic-Electronic Information and Materials of Hebei Province,College of Physics Science and Technology,Hebei University,Baoding 071000,China [3]Wuhan National High Magnetic Field Center,School of Physics,Huazhong University of Science and Technology,Wuhan 430074,China

出　　处：《National Science Review》2024年第11期188-196,共9页国家科学评论（英文版）

基　　金：supported by the National Natural Science Foundation of China(22350003,U21A2069 and 52202171);the National Key R&D Program of China(2023YFE0210800);the Hubei Provincial Natural Science Foundation of China(2024AFA012).

摘　　要：Epitaxy is the cornerstone of semiconductor technology,enabling the fabrication of single-crystal film.Recent advancements in van der Waals(vdW)epitaxy have opened new avenues for producing wafer-scale single-crystal 2D atomic crystals.However,when it comes to molecular crystals,the overall weak vdW force means that it is a significant challenge for small molecules to form a well-ordered structure during epitaxy.Here we demonstrate that the vdW epitaxy of Sb_(2)O_(3)molecular crystal,where the whole growth process is governed by vdW interactions,can be precisely controlled.The nucleation is deterministically modulated by epilayer–substrate interactions and unidirectional nuclei are realized through designing the lattice and symmetry matching between epilayer and substrate.Moreover,the growth and coalescence of nuclei as well as the layer-by-layer growth mode are kinetically realized via tackling the Schwoebel-Ehrlich barrier.Such precise control of vdW epitaxy enables the growth of single-crystal Sb_(2)O_(3)molecular film with desirable thickness.Using the ultrathin highly oriented Sb_(2)O_(3)film as a gate dielectric,we fabricated MoS 2-based field-effect transistors that exhibit superior device performance.The results substantiate the viability of precisely managing molecule alignment in vdW epitaxy,paving the way for large-scale synthesis of single-crystal 2D molecular crystals.

关 键 词：van der Waals epitaxy inorganic molecular crystal layer-by-layer growth single-crystal film DIELECTRIC 

分 类 号：O469[理学—凝聚态物理] TB30[理学—电子物理学]