A new metallization method of modified tannic acid photoresist patterning  

作　　者：Zicheng Tang Xubin Guo Haihua Wang Huan Chen Wenbing Kang 

机构地区：[1]National Engineering Research Center for Colloidal Materials,School of Chemistry and Chemical Engineering,Shandong University,Jinan,Shandong province,250100,China

出　　处：《Industrial Chemistry & Materials》2024年第2期284-288,共5页工业化学与材料（英文）

基　　金：supported by the Special Fund for Key Research Project of Shandong Province of China(No.2019JZZY020229).

摘　　要：Metal patterning from a modified tannic acid(TA-Boc-MA)photoresist and the processes are designed using protection of hydroxyl groups in tannic acid,formulation into a photoresist,an exposure and pattern treatment process,and metallization by electroless Ag deposition with silver ion solution.

关 键 词：Tannic acid Positive photoresist Metallization method Metal patterning Ag pattern 

分 类 号：TN3[电子电信—物理电子学]