Displacement damage effects in MoS_(2)-based electronics  

作　　者：Kaiyue He Zhanqi Li Taotao Li Yifu Sun Shitong Zhu Chao Wu Huiping Zhu Peng Lu Xinran Wang Maguang Zhu 

机构地区：[1]School of Integrated Circuits,Nanjing University,Suzhou 215000,China [2]Suzhou Laboratory,Suzhou 215000,China [3]School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210000,China [4]Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [5]Jihua Laboratory,Foshan 528200,China

出　　处：《Journal of Semiconductors》2024年第12期152-158,共7页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No.62301247);the Fundamental Research Funds for the Central Universities (Grant No.2024300427);the Natural Science Foundation of Jiangsu Province (Grant No.BK20230778);the Key Research and Development Program of Jiangsu Province (Grant No.BK20232009);the Innovation Leading Talent Foundation of Suzhou (Grant No.ZXL2023164);Guangdong Major Project of Basic Research (Grant No.2021B0301030003);Jihua Laboratory (Project No.X210141TL210).

摘　　要：Owing to the unique characteristics of ultra-thin body and nanoscale sensitivity volume,MoS_(2)-based field-effect tran-sistors(FETs)are regarded as optimal components for radiation-hardened integrated circuits(ICs),which is exponentially grow-ing demanded especially in the fields of space exploration and the nuclear industry.Many researches on MoS_(2)-based radiation tolerance electronics focused on the total ionizing dose(TID)effect,while few works concerned the displacement damage(DD)effects,which is more challenging to measure and more crucial for practical applications.We first conducted measurements to assess the DD effects of MoS_(2) FETs,and then presented the stopping and ranges of ions in matter(SRIM)simulation to analysis the DD degradation mechanism in MoS_(2) electronics.The monolayer MoS_(2)-based FETs exhibit DD radiation tolerance up to 1.56×1013 MeV/g,which is at least two order of magnitude than that in conventional radiation hardened ICs.The exceptional DD radiation tolerance will significantly enhance the deployment of MoS_(2) integrated circuits in environments characterized by high-energy solar and cosmic radiation exposure.

关 键 词：MoS_(2) field effect transistor displacement damage effect radiation hardness proton radiation 

分 类 号：TN386[电子电信—物理电子学]