Bi_(2)Te_(3)热电器件的制备以及界面优化  

Preparation of Bi_(2)Te_(3) thermoelectric devices and interface optimization

作　　者：王奕蘅 卢嘉祺 孙凯星 薛天宇 王博文[1] 夏聪 夏明岗[1] WANG Yiheng;LU Jiaqi;SUN Kaixing;XUE Tianyu;WANG Bowen;XIA Cong;XIA Minggang(School of Physics,Xi'an Jiaotong University,Xi'an 710049,China)

机构地区：[1]西安交通大学物理学院,陕西西安710049

出　　处：《物理实验》2024年第12期46-52,共7页Physics Experimentation

基　　金：西安交通大学校级后备名师C类项目(2019);西安交通大学教改项目(No.2002Z,No.2202Y);国家自然科学基金项目(No.11774278)。

摘　　要：基于温差发电技术,利用仿真模拟和实验研究了Bi_(2)Te_(3)热电器件的制备以及界面的优化处理.通过计算机模拟建立热电器件模型,构建71对粒子组成的热电器件,模拟结果表明:在冷热端温差为150℃条件下产生的电动势约为4.37 V.采用氢等离子体清洗Bi_(2)Te_(3)粒子表面,利用X光电子能谱检测处理前后粒子的元素,发现氢等离子体清洗处理工艺可有效去除热电材料的氧化层.利用Sn膏将Bi_(2)Te_(3)半导体材料和Cu片无Pb焊接,制备热电器件,测试其发电效率,绘制效率随温差电阻变化图像.利用四点法测试氢等离子体处理前后的粒子电阻,发现接触电阻减小,说明界面氧化物含量减少,表面的缺陷程度降低.Based on thermoelectric generation technology,the preparation of Bi_(2)Te_(3) thermoelectric devices and the interface optimization to improve their thermoelectric properties were studied using simulation and experiment.Firstly,the thermoelectric device model was established by computer simulation.By constructing a thermoelectric device composed of 71 pairs of particles,the simulation results showed that the electromotive force generated was about 4.37 V under the temperature difference of 150 °C between the hot and cold ends.In the experiment,the surface of Bi_(2)Te_(3) particles was deoxidated by hydrogen plasma cleaning,and the elements before and after the treatment were detected by X-ray photoelectron spectroscopy.It was found that the hydrogen plasma cleaning process could effectively remove the oxide layer of thermoelectric materials.Then,lead-free soldering of Bi_(2)Te_(3) semiconductor material and copper sheet with solder paste was used to prepare thermoelectric devices.The power generation efficiency of thermoelectric devices was tested by using the built test device,and the image of efficiency changing with temperature difference resistance was drawn.Finally,the four-point method was used to test the particle resistance before and after hydrogen plasma cleaning,and it was found that the contact resistance decreased,indicating that the interface oxide content was reduced and the degree of surface defects was decreased.

关 键 词：Bi_(2)Te_(3)热电器件 氢等离子清洗 界面优化 表征元素分析 

分 类 号：TN377[电子电信—物理电子学]