高质量铟掺杂氧化镓单晶浮区法生长研究  

High-quality Indium-doped Gallium Oxide Single Crystal Growth by Floating Zone Method

作　　者：李宪珂 张超逸 黄林[1] 孙鹏[1] 刘波[1] 徐军[1] 唐慧丽[1] LI Xianke;ZHANG Chaoyi;HUANG Lin;SUN Peng;LIU Bo;XU Jun;TANG Huili(MOE Key Laboratory of Advanced Micro-Structured Materials,School of Physics Science and Engineering,Tongji University,Shanghai 200092,China)

机构地区：[1]同济大学物理科学与工程学院,先进微结构材料教育部重点实验室,上海200092

出　　处：《无机材料学报》2024年第12期1384-1390,共7页Journal of Inorganic Materials

基　　金：国家自然科学基金(12375181);上海市科技计划项目(23511102302);中央高校基本科研业务费专项基金(22120220626)。

摘　　要：Ga_(2)O_(3)是一种新型超宽带隙半导体材料,性能出色,在高功率电子器件和日盲深紫外探测器等领域有着巨大的应用前景。通过掺入In^(3+)离子,可以调节β-Ga_(2)O_(3)的带隙宽度和光学性质,从而进一步拓展其应用范围。本研究以高纯度Ga_(2)O_(3)、In_(2)O_(3)为原料,采用光学浮区法制备了β-Ga_(2)O_(3):9%In、β-Ga_(2)O_(3):15%In单晶。生长速度为5 mm/h时,晶体出现失透现象,在光学显微镜下观察,发现晶体中含有大量气泡缺陷,这些缺陷主要呈条状和球状,其中条状气泡的长度在50~200μm范围内,沿[010]晶体生长方向延伸。通过扫描电子显微镜观察缺陷形貌和元素分布,发现气泡周围的元素分布均匀,无杂质元素聚集。结果表明,缺陷的形成与In_(2)O_(3)高温分解有关,产生的气体未及时排出,随熔体结晶进入晶体内部形成气泡。优化晶体生长工艺解决了气泡缺陷引起的晶体失透问题,得到的透明β-Ga_(2)O_(3):9%In单晶摇摆曲线半峰宽可达44arcsec,晶体的结晶质量显著提升。本研究为生长高质量β-Ga_(2)O_(3):In体块单晶提供了解决方案,为深入了解其光电性能奠定了基础。Ga_(2)O_(3) is a novel wide bandgap semiconductor material with excellent performance,which has great potential applications in high power electronic devices and deep ultraviolet detectors.By doping with In^(3+)ions,the bandgap and optical properties ofβ-Ga_(2)O_(3) can be adjusted,further expanding its application range.In this study,β-Ga_(2)O_(3):9%In andβ-Ga_(2)O_(3):15%In single crystals are prepared using high-purity Ga_(2)O_(3) and In_(2)O_(3) as raw materials by the optical floating zone method.When the growth rate is 5 mm/h,the crystals exhibit a phenomenon of transparency loss.Observation under an optical microscope reveals the presence of numerous bubble defects in the crystals,which mainly appearing strip-like and spherical shape.Length of the strip-like bubbles ranges from 50 to 200μm and extends along the[010]crystal direction.Observation under a scanning electron microscope reveals uniform elemental distribution around the bubbles,with no evidence of impurity element accumulation.These findings suggest that the formation of defects is related to the high-temperature decomposition of In_(2)O_(3),where the generated gas is not timely discharged,entering the crystal interior with the crystallization of the melt to form bubbles.After optimizing the crystal growth process,the problem of opacity caused by bubble defects is effectively resolved,resulting in transparentβ-Ga_(2)O_(3):9%In single crystal with a full width at half maximum of the rocking curve as low as 44 arcsec and significantly improved crystalline quality.This study provides a solution for growing high-qualityβ-Ga_(2)O_(3):In bulk single crystal,laying a foundation for a deeper understanding of its optoelectronic properties.

关 键 词：铟掺杂氧化镓 光学浮区法 晶体生长 气泡缺陷 

分 类 号：TQ174[化学工程—陶瓷工业]