Defect Engineering with Rational Dopants Modulation for High‑Temperature Energy Harvesting in Lead‑Free Piezoceramics  

作　　者：Kaibiao Xi Jianzhe Guo Mupeng Zheng Mankang Zhu Yudong Hou 

机构地区：[1]Key Laboratory of Advanced Functional Materials,Ministry of Education,College of Materials Science and Engineering,Beijing University of Technology,Beijing 100124,People’s Republic of China

出　　处：《Nano-Micro Letters》2025年第3期87-101,共15页纳微快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.52272103 and 52072010);Beijing Natural Science Foundation(Grant Nos.2242029 and JL23004).

摘　　要：High temperature piezoelectric energy harvester(HTPEH)is an important solution to replace chemical battery to achieve independent power supply of HT wireless sensors.However,simultaneously excellent performances,including high figure of merit(FOM),insulation resistivity(ρ)and depolarization temperature(Td)are indispensable but hard to achieve in lead-free piezoceramics,especially operating at 250°C has not been reported before.Herein,well-balanced performances are achieved in BiFeO3–BaTiO3 ceramics via innovative defect engineering with respect to delicate manganese doping.Due to the synergistic effect of enhancing electrostrictive coefficient by polarization configuration optimization,regulating iron ion oxidation state by high valence manganese ion and stabilizing domain orientation by defect dipole,comprehensive excellent electrical performances(Td=340°C,ρ250°C>10^(7)Ωcm and FOM_(250°C)=4905×10^(–15)m^(2)N^(−1))are realized at the solid solubility limit of manganese ions.The HT-PEHs assembled using the rationally designed piezoceramic can allow for fast charging of commercial electrolytic capacitor at 250°C with high energy conversion efficiency(η=11.43%).These characteristics demonstrate that defect engineering tailored BF-BT can satisfy high-end HT-PEHs requirements,paving a new way in developing selfpowered wireless sensors working in HT environments.

关 键 词：Lead-free piezoceramic Defect engineering Dopants modulation High-temperature Piezoelectric energy harvester 

分 类 号：TN384[电子电信—物理电子学] TQ174.1[化学工程—陶瓷工业]