砷化镓解理加工的划片过程仿真分析及工艺研究  

Simulation Analysis and Process Study of Scribing Processes for GaAs Cleavage Processing

作　　者：张庆正 姜晨[1] 高睿 蒋金鑫 ZHANG Qingzheng;JIANG Chen;GAO Rui;JIANG Jinxin(School of Mechanical Engineering,University of Shanghai for Science and Technology,Shanghai,200093;State Key Laboratory of Ultra-precision Machining Technology,Department of Industrial and Systems Engineering,The Hong Kong Polytechnic University,Hong Kong,999077,China)

机构地区：[1]上海理工大学机械工程学院,上海200093 [2]香港理工大学工业及系统工程系超精密加工技术国家重点实验室,中国香港999077

出　　处：《中国机械工程》2024年第12期2203-2210,共8页China Mechanical Engineering

基　　金：国家自然科学基金(51475310);机械系统与振动全国重点实验室开放课题(MSV202315)。

摘　　要：为有效提高砷化镓(GaAs)基半导体激光芯片巴条谐振腔面解理加工质量,开展了一种新型点划方式的划片仿真分析及工艺实验。建立GaAs划片过程的有限元仿真模型,根据不同划片工艺,研究划片载荷及应力分布情况;开展解理工艺验证实验,分析解理面形貌特征,对划片工艺进行验证。研究结果表明,优化后的工艺方法(即由内向外点划片)可有效降低划片过程材料表面损伤程度,减少脆性断裂现象,实验结果与仿真结果具有较高的一致性。In order to effectively improve the quality of GaAs-based semiconductor laser cavity mirrors,a new type of scribing method was proposed and carried out in simulation analysis and processing experiments.A finite element simulation model of the scribing processes of GaAs materials was established to optimize the existing processing methods and to investigate the distribution of scribing loads and stresses under different processes.A cleavage processing validation experiment was carried out to analyze the morphological characteristics of the cleavage surfaces.It is found that the optimized processing method,which involves scribing from the inside out,can effectively reduce the degree of material surface damages in the scribing processes and reduce the brittle fracture phenomenon.The experimental results were in high consistency with the simulation ones.

关 键 词：半导体激光器 谐振腔面 砷化镓解理加工 有限元分析 

分 类 号：TN248.4[电子电信—物理电子学]