Flexible and wake-up free Hf_(0.5)Zr_(0.5)O_(2) ferroelectric thin films with ultra-low operation voltage and high polarization  

作　　者：Jun-Hui Wang Tian-Peng Duan Jia-Jia Liao Zhi-Peng Wang Xin-Ran Huang Shi-Jie Jia Ke-Yu Bao Yu-Xin Fan Bing-Jian Zeng Li-Mei Jiang Min Liao Yi-Chun Zhou Qiong Yang Jie Jiang 

机构地区：[1]School of Advanced Materials and Nanotechnology,Xidian University,Xi’an 710126,China [2]School of Materials Science and Engineering,Xiangtan University,Xiangtan 411105,China [3]Guangzhou Institute of Technology,Xidian University,Guangzhou 510555,China

出　　处：《Journal of Advanced Ceramics》2024年第11期1844-1851,共8页先进陶瓷（英文）

基　　金：supported by the National Natural Science Foundation of China(Nos.12372331,12302429,11932016,and 12072307);the Outstanding Youth Science Foundation of Hunan Province,China(No.2021J20041);the Department of Education Project of Hunan Province,China(No.21B0112);the Innovation Capability Support Program of Shaanxi(No.2022TD-28);the Guangdong Basic and Applied Basic Research Foundation(No.2022A1515110116).

摘　　要：Flexible and transparent hafnium oxide-based ferroelectric films are attracting widespread attention because of the increasing demand for wearable electronic devices.However,the ultra-low voltage operation with robust and stable ferroelectricity,which is a prerequisite for portable device applications,has not been realized simultaneously.Here,we report flexible Hf_(0.5)Zr_(0.5)O_(2) ferroelectric films with a saturation voltage of only 1.3/3 V and remanent polarization(2Pr)of 38/60µC·cm^(2).Negligible wake-up effect and superior stability resistance to compressive/tensile stress and high temperature up to 150°C are also demonstrated.The polarization switching dynamics under bending are investigated based on the switching current measurement,suggesting that the intrinsic switching speeds keep almost constant at different bending radii.In addition,there is a negative correlation between the activation field and the compressive or tensile stress,which is due to the lowered energy barrier induced by the in-plane strain applied to the[111]-oriented hexagonal cell.Our work sheds light on the application of flexible,stable,and HfO2-based ferroelectric thin films with ultra-low consumption.

关 键 词：flexible ferroelectrics Hf_(0.5)Zr_(0.5)O_(2) ultra-low voltage operation reliability 

分 类 号：TB43[一般工业技术]