A V-band high-linearity BiCMOS mixer with robust temperature tolerance  

作　　者：Jiang LUO Yizhao LI Yao PENG Qiang CHENG 

机构地区：[1]School of Electronics and Information Engineering,Hangzhou Dianzi University,Hangzhou 310018,China [2]State Key Laboratory of Millimeter Waves,Southeast University,Nanjing 210096,China [3]Beijing Institute of Radio Measurement,Beijing 100854,China

出　　处：《Frontiers of Information Technology & Electronic Engineering》2024年第11期1565-1574,共10页信息与电子工程前沿（英文版）

基　　金：supported by the National Key Research and Development Program of China(No.2023YFB3811503);the Zhejiang Provincial Natural Science Foundation of China(No.LQ23F040009);the State Key Laboratory of Millimeter Waves,Southeast University(No.K202316)。

摘　　要：A high-linearity down mixer with outstanding robust temperature tolerance for V-band applications is proposed in this paper.The mixer’s temperature robustness has been greatly enhanced by employing a negative temperature-compensation circuit(NTC)and a positive temperature-compensation circuit(PTC)in the transconductance(g_(m))stage and intermediate frequency(IF)output buffer,respectively.Benefiting from the active balun with enhanced g_(m)and emitter negative feedback technique,the linearity of the mixer has been significantly improved.For verification,a double-balanced V-band mixer is designed and implemented in a 130 nm SiGe BiCMOS process.Measured over the local oscillator(LO)bandwidth from 57 GHz to 63 GHz,the mixer demonstrates a peak conversion gain(CG)of−0.5 dB,a minimal noise figure(NF)of 11.5 dB,and an input 1 dB compression point(IP_(1 dB))of 4.8 dBm under an LO power of−3 dBm.Furthermore,the measurements of CG,NF,and IP_(1 dB)exhibit commendable consistency within the temperature range of−55℃to 85℃,with fluctuations of less than 0.8 dB,1 dB,and 1.2 dBm,respectively.From 57 GHz to 63 GHz,the measured LO-to-radio frequency(RF)isolation is better than 46 dB,the measured return loss at the RF port is>29 dB,and at the LO port it exceeds 12 dB.With a 2.5 V supply voltage,the mixer power consumption is 15.75 mW,18.5 mW,and 21 mW at temperatures of−55℃,25℃,and 85℃,respectively.Moreover,the mixer chip occupies a total silicon area of 0.56 mm2 including all testing pads.

关 键 词：V-BAND Down-conversion mixer SiGe BiCMOS Temperature compensation High-linearity Active balun 

分 类 号：TN773[电子电信—电路与系统]