Ultrafast reconfigurable direct charge trapping devices based on few-layer MoS_(2)  

作　　者：Hui Gao Xuanye Liu Peng Song Chijun Wei Nuertai Jiazila Jiequn Sun Kang Wu Hui Guo Haitao Yang Lihong Bao Hong-Jun Gao 高辉;刘轩冶;宋鹏;尉驰俊;努尔泰•加孜拉;孙杰群;吴康;郭辉;杨海涛;鲍丽宏;高鸿钧(Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;School of Physical Sciences and CAS Key Laboratory of Vacuum Physics,University of Chinese Academy of Sciences,Beijing 100049,China;Hefei National Laboratory,Hefei 230088,China)

机构地区：[1]Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [2]School of Physical Sciences and CAS Key Laboratory of Vacuum Physics,University of Chinese Academy of Sciences,Beijing 100049,China [3]Hefei National Laboratory,Hefei 230088,China

出　　处：《Chinese Physics B》2024年第12期139-148,共10页中国物理B（英文版）

基　　金：supported by the National Key Research&Development Project of China(Grant No.2022YFA1204100);the National Natural Science Foundation of China(Grant No.62488201);CAS Project for Young Scientists in Basic Research(Grant No.YSBR-003);the Innovation Program of Quantum Science and Technology(Grant No.2021ZD0302700)。

摘　　要：Charge trapping devices incorporating 2D materials and high-κdielectrics have emerged as promising candidates for compact,multifunctional memory devices compatible with silicon-based manufacturing processes.However,traditional charge trapping devices encounter bottlenecks including complex device structure and low operation speed.Here,we demonstrate an ultrafast reconfigurable direct charge trapping device utilizing only a 30 nm-thick Al_(2)O_(3)trapping layer with a MoS_(2)channel,where charge traps reside within the Al_(2)O_(3)bulk confirmed by transfer curves with different gatevoltage sweeping rates and photoluminescence(PL)spectra.The direct charging tapping device shows exceptional memory performance in both three-terminal and two-terminal operation modes characterized by ultrafast three-terminal operation speed(~300 ns),an extremely low OFF current of 10^(-14)A,a high ON/OFF current ratio of up to 10^(7),and stable retention and endurance properties.Furthermore,the device with a simple symmetrical structure exhibits VDpolarity-dependent reverse rectification behavior in the high resistance state(HRS),with a rectification ratio of 10^(5).Additionally,utilizing the synergistic modulation of the conductance of the MoS_(2)channel by V_(D)and V_(G),it achieves gate-tunable reverse rectifier and ternary logic capabilities.

关 键 词：charge trapping memory two-dimensional materials reconfigurable device reverse rectification 

分 类 号：O469[理学—凝聚态物理] TP333[理学—电子物理学]