Strain-modulated antiferromagnetic Chern insulator in NiOsCl_(6) monolayer  

作　　者：Bin Wu Na Li Xin-Lian Chen Wei-Xiao Ji Pei-Ji Wang Shu-Feng Zhang Chang-Wen Zhang 武斌;李娜;陈新莲;纪维霄;王培吉;张树峰;张昌文(School of Physics and Technology,University of Jinan,Jinan 250022,China)

机构地区：[1]School of Physics and Technology,University of Jinan,Jinan 250022,China

出　　处：《Chinese Physics B》2024年第12期389-394,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.12104183,52173283,and 62071200);the Natural Science Foundation of Shandong Province,China(Grant Nos.ZR2021MA040 and ZR2023MA091);the Taishan Scholar Program of Shandong Province,China(Grant No.ts20190939);the Independent Cultivation Program of Innovation Team of Jinan City(Grant No.2021GXRC043);supported by high-performance computing platform at University of Jinan。

摘　　要：Recently,Chern insulators in an antiferromagnetic(AFM)phase have been suggested theoretically and predicted in a few materials.However,the experimental observation of two-dimensional(2D)AFM quantum anomalous Hall effect is still a challenge to date.In this work,we propose that an AFM Chern insulator can be realized in a 2D monolayer of NiOsCl_(6)modulated by a compressive strain.Strain modulation is accessible experimentally and used widely in predicting and tuning topological nontrivial phases.With first-principles calculations,we have investigated the structural,magnetic,and electronic properties of NiOsCl_(6).Its stability has been confirmed through molecular dynamical simulations,elasticity constant,and phonon spectrum.It has a collinear AFM order,with opposite magnetic moments of 1.3μBon each Ni/Os atom,respectively,and the Neel temperature is estimated to be 93 K.In the absence of strain,it functions as an AFM insulator with a direct gap with spin-orbital coupling included.Compressive strain will induce a transition from a normal insulator to a Chern insulator characterized by a Chern number C=1,with a band gap of about 30 meV.This transition is accompanied by a structural distortion.Remarkably,the Chern insulator phase persists within the 3%-10%compressive strain range,offering an alternative platform for the utilization of AFM materials in spintronic devices.

关 键 词：Chern insulator ANTIFERROMAGNETISM topological materials 

分 类 号：O469[理学—凝聚态物理]