A macro model of spin-transfer torque magnetic tunnel junction  

作　　者：Ming-Bo Chen Kun-Kun Li Xiao-Lei Yang Xue Peng Wang-Da Li En-Long Liu Hui-Zhen Wu Shi-Kun He 陈明博;李琨琨;杨晓蕾;彭雪;李旺达;刘恩隆;吴惠桢;何世坤(School of Physics and State Key Laboratory for Silicon and Advanced Semiconductor Materials,Zhejiang University,Hangzhou 310030,China;Zhejiang HIKSTOR Technology Co.,LTD.,Hangzhou 311300,China)

机构地区：[1]School of Physics and State Key Laboratory for Silicon and Advanced Semiconductor Materials,Zhejiang University,Hangzhou 310030,China [2]Zhejiang HIKSTOR Technology Co.,LTD.,Hangzhou 311300,China

出　　处：《Chinese Physics B》2024年第12期476-481,共6页中国物理B（英文版）

基　　金：Project supported by the National Science and Technology Major Project of China(Grant No.2020AAA0109003)。

摘　　要：The precise compact modeling of magnetic devices is pivotal for the integrated design of spin-transfer torque magnetic tunnel junction(STT-MTJ)in conjunction with CMOS circuitry.This work presents a macro model for an STT-MTJ which is compatible with SPICE simulation platforms.The model accurately replicates the electrical performance of the MTJ,encompassing the resistance-voltage characteristics and the pulse-width-dependent state switching behavior,and is validated with various experimental data.Additionally,the impact of process variations,particularly those affecting the MTJ diameter and barrier thickness is investigated and summarized in a corner model.Monte Carlo simulations demonstrate that our adaptable and streamlined model can be efficiently incorporated into the design of integrated circuits.

关 键 词：STT-MTJ macro model process corner Monte Carlo simulation 

分 类 号：O469[理学—凝聚态物理]