Back-side stress to ease p-MOSFET degradation on e-MRAM chips  

作　　者：Zhi-Meng Yu Xiao-Lei Yang Xiao-Nan Zhao Yan-Jie Li Shi-Kun He Ye-Wu Wang 于志猛;杨晓蕾;赵晓楠;李艳杰;何世坤;王业伍(Department of Physics,Zhejiang Province Key Laboratory of Quantum Technology and Device&State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China;Zhejiang Hikstor Technology Co.,Ltd.,Hangzhou 311300,China)

机构地区：[1]Department of Physics,Zhejiang Province Key Laboratory of Quantum Technology and Device&State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China [2]Zhejiang Hikstor Technology Co.,Ltd.,Hangzhou 311300,China

出　　处：《Chinese Physics B》2024年第12期482-486,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.51672246);the National Key Research and Development Program of China(Grant Nos.2017YFA0304302 and 2020AAA0109003);the Key Research and Development Program of Zhejiang Province,China(Grant No.2021C01002)。

摘　　要：The magnetoresistive random access memory process makes a great contribution to threshold voltage deterioration of metal-oxide-silicon field-effect transistors,especially on p-type devices.Herein,a method was proposed to reduce the threshold voltage degradation by utilizing back-side stress.Through the deposition of tensile material on the back side,positive charges generated by silicon-hydrogen bond breakage were inhibited,resulting in a potential reduction in threshold voltage shift by up to 20%.In addition,it was found that the method could only relieve silicon-hydrogen bond breakage physically,thus failing to provide a complete cure.However,it holds significant potential for applications where additional thermal budget is undesired.Furthermore,it was also concluded that the method used in this work is irreversible,with its effect sustained to the chip package phase,and it ensures competitive reliability of the resulting magnetic tunnel junction devices.

关 键 词：back-side stress metal-oxide-silicon field-effect transistor(MOSFET) magnetoresistive random access memory(MRAM) threshold voltage 

分 类 号：TN40[电子电信—微电子学与固体电子学] TP333[自动化与计算机技术—计算机系统结构]