Cu掺杂Ti-Si多孔膜材料的制备及其孔隙性能研究  

Preparation and pore properties of Cu doped Ti-Si porous membrane materials

作　　者：焦燕妮 刘忠军 雷娟 姬帅[1] 敖庆波[2] JIAO Yanni;LIU Zhongjun;LEI Juan;JI Shuai;AO Qingbo(College of Materials Science and Engineering,Xi'an Shiyou University,Xi'an 710065,China;State Key Laboratory of Porous Metal Materials,Northwest Institute for Nonferrous Metal Research,Xi'an 710016,China)

机构地区：[1]西安石油大学材料科学与工程学院,西安710065 [2]西北有色金属研究院金属多孔材料国家重点实验室,西安710016

出　　处：《功能材料》2024年第12期12201-12209,12223,共10页Journal of Functional Materials

基　　金：陕西省重点研发计划(2022QCY-LL-59);西安石油大学校青年创新团队项目(2019QNKYCXTD12)。

摘　　要：采用加压原位反应烧结技术成功制备了Cu掺杂Ti-Si金属间化合物多孔膜材料。利用扫描电子显微镜(SEM)、能谱仪(EDS)、X射线衍射仪(XRD)和电子万能试验机等测试设备对不同烧结温度、不同Cu掺杂量条件下制备的Ti-Si多孔膜材料进行了表征分析。实验结果表明,所制备的多孔膜表面主要物相均为Ti_(5)Si_(3),并伴有少量TiCu和Ti-O化合物次生相生成;生成的Ti-Si多孔膜层表面颗粒大小为0.5~2μm,膜层厚度为6~10μm。随着Cu粉掺杂量的增加或烧结温度的升高,膜材料的最大冒泡孔径和相对透气系数呈降低趋势,最大冒泡孔径在24~29μm之间,相对透气系数范围为33~97 m^(3)/(m^(2)·h·kPa)。Cu掺杂可以促进Ti-Si体系原位反应的进行:在加速Ti_(5)Si_(3)多孔膜生成的同时提高了膜层与基体的结合强度,Cu掺杂量为5%(质量分数)、900℃时制备样品的膜/基结合强度达到了19.18 MPa。The Cu-doped Ti-Si intermetallic porous membrane materials were successfully prepared by pressure in-situ reaction sintering.The Ti-Si porous membrane materials prepared at different sintering temperature and Cu doping amounts were characterized by scanning electron microscope(SEM),energy dispersive spectrometer(EDS),X-ray diffractometer(XRD)and electronic universal testing machine.The experimental results showed that the main phase of the membrane was Ti_(5)Si_(3),accompanied by a small amount of TiCu and Ti-O compound secondary phase formation.The surface particle size of the Ti-Si porous membrane was 0.5-2μm,and the thickness of the membrane layer was 6-10μm.With the increase of Cu powder doping amounts or sintering temperature,the maximum bubble pore size and the relative permeability coefficient decreased.The maximum bubble pore size is between 24-29μm,and the relative permeability coefficient ranged from 33 to 97 m^(3)/(m^(2)·h·kPa).Cu doping can promote the in-situ reaction of Ti-Si system.It accelerated the formation of Ti_(5)Si_(3)porous membrane and increased the bonding strength between the membrane layer and the substrate.When the Cu doping amount was 5wt%with the sintering temperature of 900℃,the membrane/substrate bonding strength of the prepared sample reached up to 19.18 MPa.

关 键 词：Ti-Si体系 原位反应 多孔膜 CU掺杂 

分 类 号：TG146[一般工业技术—材料科学与工程]