(Zr_(4)0Ti_(13)Cu_(12)Ni_(10)Be_(25))_(99)Nb_(1)非晶熔体与SiC陶瓷基片的润湿行为  

Wetting behavior of(Zr_(4)0Ti_(13)Cu_(12)Ni_(10)Be_(25))_(99)Nb_(1) amorphous melt and SiC ceramic substrate

作　　者：段明阳 罗欣 李宏 庄艳歆[1] Duan Mingyang;Luo Xin;Li Hong;Zhuang Yanxin(Key Laboratory of Electromagnetic Processing of Materials(Ministry of Education),Northeastern University,Shenyang 110819,China;School of Metallurgy,Northeastern University,Shenyang 11819,China;Institute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,China)

机构地区：[1]东北大学材料电磁过程研究教育部重点实验室,沈阳110819 [2]东北大学冶金学院,沈阳110819 [3]中国科学院金属研究所,沈阳110016

出　　处：《材料与冶金学报》2024年第6期570-576,共7页Journal of Materials and Metallurgy

基　　金：中国载人航天工程-空间站项目(YYMT1201-EXP08)。

摘　　要：利用高温座滴法,在重力环境下研究了(Zr_(4)0Ti_(13)Cu_(12)Ni_(10)Be_(25))_(99)Nb_(1)非晶熔体与SiC基片之间的润湿性及界面反应,探究了温度、保温时间以及空间方位对两相润湿性和界面特征的影响.研究结果表明:合金熔体在SiC基片上的润湿铺展过程可分为3个阶段,其动态接触角及平衡接触角均随温度升高而不断减小,温度的升高改善了两者间的界面润湿性;在等温润湿条件下,接触角随保温时间的延长而不断减小,最终减小至平衡接触角.在地面重力场中,当熔体分别位于SiC基片上方和下方时,重力对两相界面的作用有所不同,这导致其润湿行为不同.不同温度下保温30 min后,熔体在SiC基片上方时的平衡接触角分别为65.7°,61.0°,60.7°,而熔体在SiC基片下方时,其平衡接触角分别为75.8°,65.9°,63.4°,前者比后者小.当温度大于880℃时,熔体与SiC基片的界面处生成了ZrC和TiC相,这会对合金的非晶形成能力和热稳定性产生影响.The wettability and interfacial reaction between(Zr_(4)0Ti_(13)Cu_(12)Ni_(10)Be_(25))_(99)Nb_(1) amorphous melt and SiC substrate were studied under gravity using the high-temperature sitting drop method,and the effects of temperature,holding time,and spatial orientation on the wettability and interfacial characteristics of the two phases were investigated.The results show that the wetting and spreading process of alloy melt on the SiC substrate can be divided into three stages,both the dynamic and equilibrium contact angle between alloy melt and SiC decrease with the increase of temperature,which means higher temperature helps improve the wettability between amorphous melt and SiC solid.Under isothermal wetting,the contact angle decreases with the extension of holding time and finally reaches the equilibrium contact angle.In the ground gravity field,when the melt is located above and below the SiC substrate,the effect of gravity on the interface of the two phases is different,which leads to different wetting behaviors.The equilibrium contact angles of melt above the SiC substrate are 65.7°,61.0°,and 60.7°,respectively,after holding for 30 min at different temperatures,while the equilibrium contact angles of melt below the SiC substrate are 75.8°,65.9°,and 63.4°,respectively,and the former is smaller than the latter.When the temperature is higher than 880℃,ZrC and TiC phases are formed at the interface between the melt and SiC substrate,which could affect the amorphous forming ability and thermal stability of the alloy.

关 键 词：锆基非晶 润湿 接触角 界面反应 SiC基片 

分 类 号：TG139.8[一般工业技术—材料科学与工程]