漏极结构对平面型纳米沟道真空三极管性能影响的模拟研究  

Simulation Study on the Effect of Drain Structure on the Performance of Planar Nanochannel Vacuum Transistors

作　　者：甘露 吴胜利[1] 唐文华 李洁 GAN Lu;WU Sheng-li;TANG Wen-hua;LI Jie(Key Laboratory for Physical Electronics and Devices of the Ministry of Education,Xi'an Jiaotong University,Xi'an 710049,China)

机构地区：[1]西安交通大学电子物理与器件教育部重点实验室,陕西西安710049

出　　处：《真空电子技术》2024年第6期47-53,共7页Vacuum Electronics

摘　　要：近年来基于纳米沟道的真空电子器件引起越来越多的关注,其中平面型纳米沟道真空三极管因采用平面工艺、制造过程相对简单且与微电子制造工艺兼容,表现出更好的发展潜力。基于器件源电极越尖锐,局部电场越强,越易实现电子发射,相关研究工作主要集中在源电极形状及结构尺寸对器件性能的影响,针对漏电极形状对器件性能影响的研究则鲜有报道。因此,提出了一种具有圆弧型漏电极形状的真空三极管结构,仿真研究了漏电极半径和真空通道长度对器件性能的影响,结果表明,对于真空沟道为40 nm,漏极曲率半径为60 nm的器件,在给定源漏电压为10 V,栅电压为1 V的情况下,源漏电流达到10-4A。这种圆弧型漏极真空三极管相较于平坦型漏极真空三极管,由于其具有更大的电子接收面积,从而可获得更大的源漏电流,有利于提升器件性能。In recent years,vacuum electronic devices based on nanochannels have attracted increasing atten-tion.Among them,planar nanochannel vacuum transistors have shown better development potential due to the use of planar processes,relatively simple manufacturing processes,and compatibility with microelectronic manu-facturing processes.Based on the fact that the sharper the source electrode of the device,the stronger the local electric field,and the easier it is to achieve electron emission,related research mainly focuses on the influence of source electrode shape and structural size on device performance,and there are few reports on the influence of drain electrode shape.Vacuum transistor structures with circular drain electrode shape are proposed,and the effects of drain electrode radius and vacuum channel length on device performance are simulated.The results show that for devices with a vacuum channel of 40 nm and a drain curvature radius of 60 nm,under a source drain voltage of 10 V and a gate voltage of 1 V,the source drain current reaches 10-4 A.Compared to flat drain vacuum transistors,the circular drain vacuum transistor can obtain larger source drain current due to its larger e-lectron receiving area,which is beneficial for improving device performance.

关 键 词：纳米沟道三极管 模拟仿真 场发射特性 圆弧型漏极 

分 类 号：TN11[电子电信—物理电子学] TN48