集成电路CMP中金属腐蚀复配缓蚀剂的研究进展  

Research Progress of Compound Corrosion Inhibitors for Metal Corrosion in Integrated Circuit CMP

作　　者：武峥 牛新环 何潮 董常鑫 李鑫杰 胡槟 李佳辉 Wu Zheng;Niu Xinhuan;He Chao;Dong Changxin;Li Xinjie;Hu Bin;Li Jiahui(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,China;Hebei Collaborative Innovation Center of Microelectronic Materials and Technology in Ultra Precision Processing,Tianjin 300130,China;Hebei Engineering Research Center of Microelectronic Materials and Devices,Tianjin 300130,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130 [3]河北省微电子超精密加工材料与技术协同创新中心,天津300130 [4]河北省微电子专用材料与器件工程中心,天津300130

出　　处：《半导体技术》2025年第1期1-9,共9页Semiconductor Technology

基　　金：国家重点研发计划(2023YFB3507100);国家科技重大专项(2016ZX02301003-004-007);国家自然科学基金(62074049);河北省自然科学基金(F2021202009);河北省专业学位精品案例库建设项目(KCJPZ2023007)。

摘　　要：在化学机械抛光(CMP)过程中,集成电路金属多层布线因受抛光液中化学试剂的腐蚀而经常导致表面缺陷的出现。将两种及以上能够产生协同缓蚀效果的化学试剂复配可以得到较单一试剂更强的缓蚀性能。介绍了多试剂协同腐蚀抑制的机理,总结了国内外多试剂协同中两种缓蚀剂、表面活性剂与缓蚀剂、两种表面活性剂的复配协同在集成电路CMP金属腐蚀抑制应用中的研究进展,并延伸到碳钢金属等防腐领域,最后对CMP领域中多试剂协同抑制的发展进行了展望。In the process of chemical mechanical polishing(CMP),the surface defects of metal wiring layer of integrated circuits are often caused by the corrosion of chemical reagents in the polishing solution.The compounding of two or more chemical reagents that can produce collaborative corrosion inhibition effect can obtain stronger corrosion inhibition performance than a single reagent.The mechanism of multi-reagent collaborative corrosion inhibition is introduced,the research progress of multi-reagent collaboration at home and abroad such as the compounding collaboration of two inhibitors,surfactants and corrosion inhibitors and two surfactants in the application of CMP metal corrosion inhibition in integrated circuits is summarized,and extends to the corrosion protection fields such as carbon steel metal.Finally,the development of multi-reagent collaborative inhibition in CMP field is prospected.

关 键 词：缓蚀剂 表面活性剂 化学机械抛光(CMP) 协同作用 金属腐蚀抑制 

分 类 号：TN305.2[电子电信—物理电子学]