基于石墨烯/硫化铅量子点异质结的窄带光电探测器  

Narrowband Photodetectors Based on Graphene/Lead Sulfide Quantum Dots Heterojunction

作　　者：郑玉琳 黄北举[2] 程传同 陈力颖[1] Zheng Yuli;Huang Beju;Cheng Chuantong;Chen Liying(School of Electronics and Information Engineering,Tiangong University,Tianjin 300387,China;Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors Chinese Academy of Sciences,Beijing 100083,China)

机构地区：[1]天津工业大学电子与信息工程学院,天津300387 [2]中国科学院半导体研究所光电子材料与器件重点实验室,北京100083

出　　处：《半导体技术》2025年第1期10-16,共7页Semiconductor Technology

基　　金：国家重点研发计划(2023YFB3609300);中国科学院青年创新促进会会员(2022109);精密测试技术及仪器国家重点实验室开放基金(Pilab2406)。

摘　　要：纳米材料硫化铅量子点(PbS QD)以其高光吸收率和尺寸可调的带隙,被视为短波红外(SWIR)光电探测器的重要候选材料。将卤素配体置换的PbS QD薄膜与单层石墨烯结合制备了石墨烯/硫化铅量子点异质结光电探测器。采用液相配体交换技术结合单步旋涂工艺,实现了PbS QD薄膜的均匀沉积。该技术不仅减少了缺陷态的产生,而且通过单步旋涂工艺能够实现所需薄膜厚度的快速沉积,简化了器件制备流程,满足工业化生产要求。测试了器件在SWIR波段的性能,结果显示该光电探测器在1550 nm处响应度为1.26×10^(4)A/W,显著高于其他波段,证实器件在1550 nm波段附近具有窄带探测的能力。此外,在1550 nm处比探测率高达1.49×10^(12)Jones。该结果表明器件在SWIR波段具备高探测灵敏度和实际应用的潜力。The nanomaterial lead sulfide quantum dot(PbS QD)is an important candidate for short-wave infrared(SWIR)photodetectors due to its high optical absorbance and size-tunable bandgap.Graphene/lead sulfide quantum dot heterojunction photodetectors were prepared by combining films of halogen ligand-substituted PbS QDs with monolayer graphene.The liquid-phase ligand exchange technique combined with a single-step spin-coating process was used to achieve uniform deposition of the PbS QDs films.This technique reduces the generation of defective states and simplifies the device preparation process to meet the requirements of industrial production by enabling rapid deposition of the desired film thickness through the single-step spin-coating process.The performance of the device in the SWIR band was tested,and the results show that the photodetector responsivity at 1550 nm is 1.26×10^(4)A/W,which is significantly higher than that of other bands.It is confirmed that the device has the ability of narrow-band detection near the 1550 nm band.In addition,the specific detectivity at 1550 nm is as high as 1.49×10^(12)Jones,which indicates that the device has high detection sensitivity and potential for practical applications in the SWIR band.

关 键 词：相转移配体交换 硫化铅量子点 石墨烯 光电探测器 红外探测 

分 类 号：TN215[电子电信—物理电子学]