基于GaN肖特基二极管的大功率微波限幅技术研究  

Research on high-power microwave limiter technology based on GaN Schottky diode

作　　者：霍树栋[1] 张正兴 郑梦晗 党魁 张进成[1] 郝跃[1] HUO Shudong;ZHANG Zhengxing;ZHENG Menghan;DANG Kui;ZHANG Jincheng;HAO Yue(Xidian University,Xi'an 710071,China)

机构地区：[1]西安电子科技大学,西安710071

出　　处：《集成电路与嵌入式系统》2025年第1期1-11,共11页Integrated Circuits and Embedded Systems

基　　金：国家自然科学基金青年基金项目(62204195);江苏省重点研发计划项目(BE20220572)。

摘　　要：随着高功率微波技术的发展,超宽带、高功率等强电磁技术对电子化设备威胁越来越大,使用高功率微波摧毁电子信息装备成为了干扰通信系统的重要方式。对高功率微波的防护主要分为前门防护和后门防护,限幅器作为前门防护的重要微波器件也面临越来越高的要求。本文首先介绍了GaN材料及肖特基二极管的器件特点和性能优势,然后论文介绍了以半导体器件为基础的限幅器原理及电路结构,并对以GaN肖特基二极管为基础的新一代大功率微波限幅技术研究进展进行论述。With the development of high-power microwave technology,strong electromagnetic technologies such as ultra-wideband and high power pose an increasing threat to electronic equipment.Using high-power microwaves to destroy electronic information equipment has become an important way to interfere with communication systems.The protection of high-power microwaves is mainly divided into front-door protection and back-door protection.As an important microwave device for front-door protection,the limiter is also facing higher and higher requirements.This paper first introduces the device characteristics and performance advantages of GaN materials and Schottky diodes,and then introduces the principle and circuit structure of the limiter based on semiconductor devices,and discusses the research progress of the new generation of high-power microwave limiting technology based on GaN Schottky diodes.

关 键 词：高功率微波技术 GaN二极管 大功率限幅器 自检波架构 

分 类 号：TN609[电子电信—电路与系统]