国产化叠层电容工艺的失效机理与可靠性研究  

Failure mechanism and reliability study of domestic stacked capacitor processes

作　　者：王烁 王静 琚安安 赵容 孔泽斌 WANG Shuo;WANG Jing;JU An'an;ZHAO Rong;KONG Zebin(Shanghai Aerospace Technology Research Institute,Shanghai 201109,China)

机构地区：[1]上海航天技术基础研究所,上海201109

出　　处：《集成电路与嵌入式系统》2025年第1期29-33,共5页Integrated Circuits and Embedded Systems

摘　　要：通过对国产运算放大器的一项失效分析研究,揭示了由于工艺变更引起的叠层MIS电容短路是导致器件失效的主要原因。在低电场条件下,电容表现正常,但在高电场条件下,由于Fowler Nordheim隧穿效应,热电子碰撞引发的缺陷积累最终导致了电容的短路失效。通过Sentaurus TCAD仿真分析,验证了界面掺杂原子浓度差异对氧化层生长速率的影响,并提出了相应的工艺改进建议,进而提升国产芯片的可靠性。This work presents a failure analysis study on domestic operational amplifiers,revealing that the main cause of device failure is the short circuit of stacked MIS capacitors induced by process changes.Under low electric fields,the capacitors perform normally,but under high electric fields,Fowler-Nordheim tunneling and defect accumulation caused by hot electron collisions ultimately lead to capacitor short circuits.Using Sentaurus TCAD simulations,we verified the impact of doping atom concentration differences at the interface on the oxide layer growth rate and proposed process improvement recommendations to enhance the reliability of domestic chips.

关 键 词：失效分析 多晶硅氧化 国产化工艺 掺杂扩散 电容击穿 Sentauru TCAD仿真 

分 类 号：TN305.5[电子电信—物理电子学]