高性能近红外硅光电倍增管的设计  

Design on high performance of near-infrared silicon photomultiplier

作　　者：陈力颖[1,2] 左金 程传同 CHEN Liying;ZUO Jin;CHENG Chuantong(School of Electronics and Information Engineering,Tiangong University,Tianjin 300387,China;Tianjin Key Laboratory of Photoelectric Detection Technology and System,Tiangong University,Tianjin 300387,China;State Key Laboratory of Integrated Optoelectron,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]天津工业大学电子与信息工程学院,天津300387 [2]天津工业大学天津市光电检测技术与系统重点实验室,天津300387 [3]中国科学院半导体研究所光电子研究发展中心,北京100083 [4]中国科学院大学材料科学与光电技术学院,北京100049

出　　处：《天津工业大学学报》2024年第6期73-79,88,共8页Journal of Tiangong University

基　　金：国家重点研发计划项目(2018YFA0209000);国家自然科学基金青年项目(61904173)。

摘　　要：为了进一步提高硅光电倍增管在近红外波段的光子探测效率,提出了一种平面型外延电阻淬灭型硅光电倍增管和一种基于倒金字塔结构的硅光电倍增管。通过各向异性腐蚀形成倒金字塔结构,在倒金字塔4个侧面以离子注入的方式形成p-enrich区域,增大了PN结的结面积,加大了有效光探测面积,提高了几何填充因子,从而在一定程度上提高了光子探测效率,并对相同掺杂浓度的平面型硅光电倍增管和基于倒金字塔结构的硅光电倍增管结构进行仿真。结果表明:2种器件的击穿电压约为-13 V;微单元尺寸为20μm、过电压6 V时900 nm处的平面型外延电阻淬灭型硅光电倍增管和基于倒金字塔结构的硅光电倍增管的光子探测效率分别为11.2%和15.6%,说明2种结构均能够对近红外波段的光进行有效探测,而基于倒金字塔结构的硅光电倍增管能够提高器件近红外波段的光子探测效率。In order to further improve the photon detection efficiency of silicon photomultiplier in near-infrared band,a planar epitaxial resistance quenched silicon photomultiplier and a silicon photomultiplier based on inverted pyramid structure were proposed.The device forms an inverted pyramid structure through anisotropic etching and forms a p-enrich region on the four sides of the inverted pyramid by ion implantation,which increases the junction area of the PN junction,the effective optical detection area,and the geometric filling factor and then improves the photon detection efficiency to a certain extent.The structure of the planar silicon photomultiplier and the silicon photomultiplier based on the inverted pyramid structure with the same doping concentration is simulated.The results show that the breakdown voltage of the two devices is about-13 V.The photon detection efficiencies of the planar epitaxial resistance quenched silicon photomultiplier and the silicon photomultiplier based on inverted pyramid structure at 900 nm are 11.2%and 15.6%,respectively when its size of the micro cell is 20μm and the over bias voltage is 6 V,which describes that the two structures can effectively detect the light in the near-infrared band and the silicon photomultiplier based on the inverted pyramid structure can improve the photon detection efficiency in the near-infrared band of the device.

关 键 词：硅光电倍增管 倒金字塔结构 近红外 光子探测效率 

分 类 号：TN152[电子电信—物理电子学]