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作 者:牛家旋 冯玉玲[1] 匡尚奇 NIU Jiaxuan;FENG Yuling;KUANG Shangqi(School of Physics,Changchun University of Science and Technology,Changchun 130022)
出 处:《长春理工大学学报(自然科学版)》2024年第6期26-35,共10页Journal of Changchun University of Science and Technology(Natural Science Edition)
基 金:吉林省教育厅科学研究规划项目(JJKH20200728KJ)。
摘 要:半导体激光器系统输出同步混沌光在保密光通讯领域具有重要的研究意义和应用价值。对单向耦合混沌同步系统中具有外腔光反馈的驱动半导体激光器和响应半导体激光器输出混沌激光,以及这两台半导体激光器输出混沌光的同步性进行数值分析。首先,应用多目标优化算法对外腔光反馈半导体激光器参数进行了全局优化,得到单一半导体激光器输出混沌光的带宽、安全性和复杂性同时增强的优化参数,分析了输出混沌光的有效带宽、自相关函数和最大李雅普诺夫指数之间的相互关系,获得一系列优化的混沌光输出。其次,针对优化得到的不同混沌光,进一步全局搜索单向耦合半导体激光器系统中的注入强度和频率失谐,并探究了闭环结构响应激光器的外腔光反馈结构对混沌同步度的影响,最终获得了两台激光器可以输出无时延特征宽带宽且具有较好复杂性的混沌激光,可以实现互相关系数达0.995的广义同步。The synchronous chaotic light output of semiconductor laser system has important research significance and application value in the field of secure optical communication.In a unidirectional coupled chaotic synchronization system,the output of chaotic laser by a driving semiconductor laser and a responding semiconductor laser with external cavity optical feedback and the output of chaotic light by these two semiconductor lasers are numerically analyzed.Firstly,the parameters of external cavity optical feedback semiconductor laser are globally optimized by multi-objective genetic algorithm.The optimized parameters for the simultaneous enhancement of bandwidth,security and complexity of chaotic light output by a single semiconductor laser are obtained.Aiming at the different optimized chaotic light,t he injection intensity and frequency mismatch in the unidirectional coupled semiconductor laser system are further searched globally,and the correlation number of chaotic laser output between the two lasers is finally obtained.The influence of the closed-loop structure response to the external cavity optical feedback structure of the laser on the chaotic synchronization degree is investigated.Finally,the two lasers can output chaotic lasers with no delay characteristics and wide bandwidth and good complexity.Generalized synchronization with the number of cross-relations up to 0.995 can be realized.
分 类 号:TN248.4[电子电信—物理电子学]
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