基于光捕获效应的Ti3C2Tx/硅纳米线异质结光电探测器  

Ti3C2Tx/Silicon Nanowires Heterojunction Photodetector Based on Light Trapping Effect

作　　者：喻杰 Yu Jie(Hefei University of Technology,Hefei,China)

机构地区：[1]合肥工业大学,安徽合肥

出　　处：《科学技术创新》2025年第1期17-20,共4页Scientific and Technological Innovation

摘　　要：通过金属辅助化学刻蚀法制备了硅纳米线(Si NWs),使用最小强化层脱层刻蚀技术分离了Ti_(3)C_(2)Tx纳米片,随后构筑了Ti_(3)C_(2)Tx/Si NWs异质结光电探测器。利用扫描电子显微镜对Ti_(3)C_(2)Tx/Si NWs的形貌进行分析,采用X射线衍射仪分析了Ti_(3)C_(2)Tx的结构。器件分析表明,该器件呈现出宽带响应特性,在920 nm处具有约526 mA/W的峰值响应度,其响应相较于平面硅器件有了很大的提升。这种光电特性与Si NWs中的光捕获效应有关。这些结果表明,Si NWs是未来高性能硅基光电探测器的潜在构建模块。Silicon nanowires(Si NWs)were fabricated using the metal-assisted chemical etching method.Ti_(3)C_(2)Tx nanosheets were exfoliated using minimal enhanced layer delamination etching technology,followed by the construction of Ti_(3)C_(2)Tx/Si NWs heterojunction photodetectors.The morphology of Ti_(3)C_(2)Tx/Si NWs was analyzed using scanning electron microscopy(SEM),and the structure of Ti_(3)C_(2)Tx was characterized by X-ray diffraction.Device analysis indicated that the heterojunction exhibited broadband response characteristics,with a peak responsivity of 526 mA/W at 920 nm,which represents a significant enhancement compared to planar silicon device.This improved photodetection performance is attributed to the light trapping effect within the Si NWs.These results suggest that Si NWs are promising building blocks for future high-performance silicon-based photodetectors.

关 键 词：硅纳米线 光电探测器 光捕获效应 

分 类 号：TN29[电子电信—物理电子学]