Low-temperature bonding of Si and polycrystalline diamond with ultra-low thermal boundary resistance by reactive nanolayers  

作　　者：Yi Zhong Shuchao Bao Ran He Xiaofan Jiang Hengbo Zhang Wenbiao Ruan Mingchuan Zhang Daquan Yu 

机构地区：[1]School of Electronic Science and Engineering,Xiamen University,Xiamen 361005,China [2]Xiamen Sky Semiconductor Technology Co.,Ltd.,Xiamen 361013,China [3]Huawei Technologies Co.,Ltd.,Shenzhen 518028,China

出　　处：《Journal of Materials Science & Technology》2024年第21期37-43,共7页材料科学技术（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.62104206);the Fundamental Research Funds for the Central Universities(Grant No.20720220072).

摘　　要：Thermal management is a critical challenge in modern electronics and recent key innovations have focused on integrating diamond directly onto semiconductors for efficient cooling.However,the connection of diamond/semiconductor that can simultaneously achieve low thermal boundary resistance(TBR),minimal thermal budget,and sufficient mechanical robustness remains a formidable challenge.Here,we propose a collective wafer-level bonding technique to connect polycrystalline diamonds and semiconductors at 200℃by reactive metallic nanolayers.The resulting silicon/diamond connections exhibited an ultra-low TBR of 9.74 m^(2)K GW^(–1),drastically outperforming conventional die-attach technologies.These connections also demonstrate superior reliability,withstanding at least 1000 thermal cycles and 1000 h of high temperature/humidity torture.These properties were affiliated with the recrystallized microstructure of the designed metallic interlayers.This demonstration represents an advancement for low-temperature and high-throughput integration of diamonds on semiconductors,potentially enabling currently thermally limited applications in electronics.

关 键 词：Electronic packaging Thermal management Reactive bonding Diamond heat spreader Thermal boundary resistance 

分 类 号：TQ163[化学工程—高温制品工业]