聚焦离子束在金表面极限蚀刻宽度的分子动力学研究  

Molecular dynamics study on the limited etching width on gold surface by focused ion beam

作　　者：于娜[1] 秦宏宇[1] 徐强[1] YU Na;QIN Hong-yu;XU Qiang(School of Prospecting and Surveying Engineering,Changchun Institute of Technology,Changchun 130022,China)

机构地区：[1]长春工程学院勘查与测绘工程学院,吉林长春130022

出　　处：《东北师大学报（自然科学版）》2024年第4期98-104,共7页Journal of Northeast Normal University(Natural Science Edition)

基　　金：吉林省教育厅项目(JJKH20230701KJ);吉林省科技厅项目(20240302125GX)。

摘　　要：通过分子动力学模拟的方法,研究了能量为30 keV的Ga离子蚀刻Au表面产生的极限蚀刻宽度.模拟使用严格聚焦的离子束对Au(111)表面进行辐照,获取体系的结构特征及动力学过程.研究结果表明,蚀刻过程受到原子溅射和再沉积的双重因素影响.在辐照的初始阶段,浅层表面的蚀刻主要受表层原子溅射控制,极限蚀刻宽度为8 nm.然而,随着蚀刻深度的增加,蚀刻槽内壁的溅射使蚀刻宽度增加,表面平均蚀刻宽度增加到12 nm,部分区域甚至可达17 nm.这对于离子束精细纳米加工的尺度控制、航空器件以及核反应堆器壁材料辐照损伤等领域研究具有重要意义.To gain a better understanding of the interaction between energetic particles and materials,this study conducted molecular dynamics simulations to investigate the limiting etching width of Au surfaces irradiated by Ga ions with an energy of 30 keV.Using a strictly focused ion beam,the structural characteristics and kinetic process of system of irradiated Au(111)surface has been obtained.The results indicate that both atomic sputtering and redeposition play a role in the etching process.In the initial stage of irradiation,the etching of the shallow surface is primarily controlled by surface atomic sputtering,with a limiting etching width of 8 nm.However,as the etching depth increases,the etching width is increased by the sputtering of the inner wall of the etching groove,resulting in an average etching width of the surface of 12 nm,and reaching up to 17 nm in some areas.These findings are of great significance for the experimental research,such as the scale control of ion beam fine nanomachining and the radiation damage of aerospace devices and nuclear reactor wall materials.This study has gained profound insights into the microscopic mechanisms underlying particle-material interactions while offering crucial theoretical support for experimental design.

关 键 词：聚焦离子束 金 极限宽度 分子动力学 

分 类 号：TB383[一般工业技术—材料科学与工程]