一款基于SiGe工艺的宽带射频驱动放大器  

A broadband RF DA based on SiGe technology

作　　者：张斌 蒋颖丹[1] 权帅超 汪柏康 孙莎莎 秦战明 孙文俊 ZHANG Bin;JIANG Yingdan;QUAN Shuaichao;WANG Baikang;SUN Shasha;QIN Zhanming;SUN Wenjun(The 58th Research Institute of China Electronics Technology Group Corporation,Wuxi 214035,China)

机构地区：[1]中国电子科技集团第五十八研究所,江苏无锡214035

出　　处：《现代电子技术》2025年第2期14-20,共7页Modern Electronics Technique

摘　　要：为了降低温漂效应对放大器的影响,通过理论分析,设计了一款集成有温度补偿直流偏置网络的宽带射频驱动放大器。为了提高增益和输出功率,电路采用两级差分共射-共基极(cascode)结构,输出端口集成了一款结构新颖的差分转单端Marchand巴伦,同时基于0.18μm SiGe BiCMOS高性能异质结双极晶体管工艺进行设计。电磁仿真结果显示,在8~16 GHz的频带范围内,放大器的增益>26 dB,输出1 dB功率压缩点≥10 dBm,饱和输出功率≥13 dBm,端口回波损耗≤-10 dB,-40~125℃范围内同频点增益浮动≤1.5 dB。所设计的驱动放大器电路性能稳定,2.8 V电源工作电流为45 mA,尺寸仅为0.50 mm×0.58 mm,实现了SiGe放大器高性能、小型化的设计要求。In order to reduce the influence of temperature drift on amplifiers,a broadband RF driver amplifier(DA)with integrated temperature compensated DC bias network is designed by means of the theoretical analysis.In order to improve the gain and output power,the two-stage differential common emitter common base(cascode)structure is adopted,and a novel differential conversion single-ended Marchand balun is integrated into the output port.The circuit is designed based on the 0.18μm Silicon Germanium(SiGe)BiCMOS high-performance heterojunction bipolar transistor(HBT)process.The electromagnetic simulation results show that in the frequency band range of 8~16 GHz,the gain of the amplifier is greater than 26 dB,the output 1 dB power single compression point is≥10 dBm,the saturation output power is≥13 dBm,the port return loss is≤-l0 dB,and the gain of the same frequency point within the range of-40℃to 125℃is≤1.5 dB.The performance of the designed DA is stable,and the working current of the 2.8 V power supply is 45 mA,and the circuit area is only 0.50 mm×0.58 mm,which can realize the design requirements of high performance and miniaturization of SiGe amplifier.

关 键 词：驱动放大器 宽带射频 SIGE工艺 温度补偿 共射-共基极(cascode)结构 Marchand巴伦 异质结双极晶体管 

分 类 号：TN454-34[电子电信—微电子学与固体电子学]