Room temperature growth of CsPbBr_(3) single crystal for asymmetric MSM structure photodetector  

作　　者：Longxing Su 

机构地区：[1]International School of Microelectronics,Dongguan University of Technology,Dongguan 523808,China

出　　处：《Journal of Materials Science & Technology》2024年第20期113-122,共10页材料科学技术（英文版）

基　　金：This work was financially supported by the National Natu-ral Science Foundation of China(Nos.52172149 and61705043);the Dongguan University of Technology Startup Fund(No.221110144);The author thanks Prof.Y.Fang for the helpful im-provement on the manuscript;The author also acknowledges the Materials and Devices Testing Center at Tsinghua Shenzhen Inter-national Graduate School,Shenzhen 518055,China;Dongguan University of Technology Analytical and Testing Center.

摘　　要：UV-visible broadband light harvesting ability is critical for photodetectors,and all inorganic perovskite CsPbBr_(3)is regarded as a promising candidate as the response active material.Herein,a saturated-solution crystallization method is employed to synthesize CsPbBr_(3)single crystal.Temperature-dependent photo-luminescence spectra with one-photon and two-photon excitation are systematically investigated,deter-mining a large exciton binding energy of 39.8 meV.This allows the stable excitonic emission of CsPbBr_(3)single crystal at room temperature.Subsequently,an asymmetric structure CsPbBr_(3)photodetector is fab-ricated by using InGa alloy as the Ohmic electrode and Au as the Schottky electrode.At-8 V,the device exhibits a prominent response to the irradiation from UV to green band with a maximum responsiv-ity of 2.56 A/W,an external quantum efficiency of 580%,and a detectivity of 1.24×10^(13) Hz1/2 W−1.In addition,the CsPbBr_(3)photodetector also presents rapid response speeds at both reverse and forward bias voltages and self-powered characteristics owing to the Schottky depletion layer underneath the Au electrode.The demonstration of asymmetric metal-semiconductor-metal(MSM)structure photodetector presents a promising pathway toward next-generation CsPbBr_(3)optoelectronic devices.

关 键 词：Room temperature CsPbBr_(3) Single crystal Asymmetric Photodetector 

分 类 号：TN382[电子电信—物理电子学]