Atomic-scale structure and nonlinear optical absorption of two-dimensional GeS  

作　　者：Jijun Zhang Rong Sun Yanqi Ge Jingyi Wang Zexuan Wang Lijian Meng Francis Leonard Deepak Min Zhang Peng Yin Faliang Cheng Zhiming Wang Zhongchang Wang 

机构地区：[1]Guangdong Engineering and Technology Research Centre for Advanced Nanomaterials,School of Environment and Civil Engineering,Dongguan University of Technology,Dongguan 523808,China [2]International Iberian Nanotechnology Laboratory(INL),Avenida Mestre JoséVeiga,Braga 4715-330,Portugal [3]Institute of Fundamental and Frontier Sciences,University of Electronic Science and Technology of China,Chengdu 610054,China [4]CIETI,ISEP,Polytechnic of Porto,Rua Dr.António Bernardino de Almeida,Porto 4249-015,Portugal [5]School of Information and Communication,National University of Defence Technology,Wuhan 430035,China

出　　处：《Journal of Materials Science & Technology》2024年第20期188-194,共7页材料科学技术（英文版）

基　　金：This work was financially supported by the China Postdoc-toral Science Foundation(Nos.2020M673174 and2019M663688);The authors acknowledge the European Research Executive Agency(Project No.101079184-FUNLAYERS).

摘　　要：1.Introduction Layered van der Waals materials have emerged as a new class of materials with fascinating properties for versatile potential ap-plications owing to their unique atomic structures and ultrathin thickness[1-7].As a subcategory of layered van der Waals mate-rials,group IV monochalcogenides,including Ge(S,Se,Te)and Sn(S,Se,Te),possess similar atomic structures and comparable elec-tronic structures,rendering them becoming promising alternatives for applications in thermoelectric[8],ferroelectric[9-11],photo-catalytic[12],optoelectronic[13-16],and memory devices[17-19].

关 键 词：RENDERING NONLINEAR VERSATILE 

分 类 号：TB33[一般工业技术—材料科学与工程]