(Nb、Ce、Si、Ca)掺杂对TiO_2压敏电阻陶瓷电性能的影响  

Influence of Nb, Ce, Si and Ca doping on electrical properties of TiO_2 based varistors

作　　者：李红耘[1] 唐子龙[1] 尧巍华[1] 罗绍华[1] 米佳 张中太[1] 庄严 熊西周 

机构地区：[1]清华大学材料科学与工程系,北京100084 [2]广州新日电子有限公司,广东广州510335

出　　处：《功能材料》2002年第6期635-637,共3页Journal of Functional Materials

摘　　要：采用正交实验方法研究了掺杂Nb2 O5、CeO2 、SiO2 、CaCO3 等对TiO2 压敏电阻陶瓷电性能的影响。利用XRD及SEM实验方法分析了样品的物相和微观形貌 ,发现有第二相产生。这种新的第二相的存在 ,对压敏电压有明显的影响。优选典型配方制得样品的主要电性能指标为 :V1mA=10～ 2 0V ,V10mA=2 0～ 3 0V ,α =3～ 5 ,电容C =5 0～ 90nF ,损耗tgδ <0 .8。Influence of Nb 2O 5, CeO 2, SiO 2 and CaCO 3 doping on electrical properties of TiO 2 based varistor was investigated by orthogonal test method. The crystal structure and micro morphology of the varistor prepared by standard ceramic route was analyzed by XRD and SEM, respectively. Both results revealed a temperature dependent secondary phase in the samples, which has distinct influence on the nonlinear voltage of the varistor. The main electrical properties of the sample with optimized composition are as follows: V 1mA =10～20V, V 10mA =20～30V, α =3～5, C =50～90nF and tg δ <0.8.

关 键 词：二氧化钛 掺杂 压敏电阻器 电性能 

分 类 号：TM54[电气工程—电器]