Silicon　Photodiode　with　Very　Small　Sensitive　Area  

作　　者：① YIN Changsong,LI Xiaojun (Wuhan University,Wuhan 430072,CHN) 

出　　处：《Semiconductor Photonics and Technology》1996年第4期289-292,共4页半导体光子学与技术（英文版）

摘　　要：The silicon PN junction photodiode with very small sensitive area has been investigated.The device gets superhigh light current density J LS counted by the sensitive area in the planar PN junction.The superhigh light current density is due to the light current transferred by the photogenerated minority carriers in the area around edges of the dopant diffused region.Then,we can determine the diffusion length of the photogenerated minority carriers in the substance by measuring the light current of the PN junction photodiode with very small sensitive area.ＳｉｌｉｃｏｎＰｈｏｔｏｄｉｏｄｅｗｉｔｈＶｅｒｙＳｍａｌＳｅｎｓｉｔｉｖｅＡｒｅａ①ＹＩＮＣｈａｎｇｓｏｎｇ，ＬＩＸｉａｏｊｕｎ（ＷｕｈａｎＵｎｉｖｅｒｓｉｔｙ，Ｗｕｈａｎ４３００７２，ＣＨＮ）Ａｂｓｔｒａｃｔ：ＴｈｅｓｉｌｉｃｏｎＰＮｊｕｎｃｔｉ...

关 键 词：PHOTODIODE Photoelectric Conversion PN Junction 

分 类 号：TN315.2[电子电信—物理电子学]