掺Sb_2O_3的SnO_2与Fe_2O_3厚膜的电学行为及气敏特性  

Electrical Behavior and Gas-Sensitive Character of SnO_2-based and Fe_2O_3-based Thick Film Elements Doped by Sb_2O_3

作　　者：陈春华[1] 刘杏芹[1] 徐文东 沈瑜生[1] 

机构地区：[1]中国科技大学材料科学系

出　　处：《传感技术学报》1992年第4期17-22,共6页Chinese Journal of Sensors and Actuators

摘　　要：介绍掺入Sb_2O_3后的SnO_2和FeO_3(由γ-Fe_2O_3-热处理得到)气敏厚膜元件电阻和灵敏度的变化规律:对于SnO_2基元件,Sb_2O_3具有低掺杂(<4%wt)电阻变小,高掺杂电阻增大的作用,但气敏性降低;对于Fe_2O_3基元件,掺入Sb_2O_3后不但能降低电阻、提高气敏性,而且对丙酮的选择性也增强.指出Sb^(3+)→Sb^(5+)变化对上述效应起着重要作用,并探讨了Fe_2O_3基元件表面化学吸附增强的原因.Sb2O3 is used as a dopant in SnO2 and Fe2O3 thick film elements, resulting in some changes in electrical property and gas sensitivity. The resistance of SnO2 obtains a lowest value when the amount of Sb2O3 is about 4wt%. The existence of Sb2O3 leads to a positive temperature coefficient of SnO2 elements and lower the gas sensitivity. In FE2O3-based elements, Sb2O3 not only decreases the resistance but also increases the gas sensitivity because of the intensification of surface chemisorption. The role of the transformation Sb3+ → Sb3+ (corresponding to Sb2O3 → Sb2O4) is discussed and emphasised.

关 键 词：气敏元件 氧化锑 掺杂陶瓷 

分 类 号：TN379[电子电信—物理电子学]