SOI和pHEMT双刀五掷开关对比设计与实现  

Comparison and Implementation of DP5T Switches in SOI and pHEMT Technologies

作　　者：张志浩[1] 黄亮[1] 余凯[1] 章国豪 

机构地区：[1]广东工业大学,广州510006

出　　处：《固体电子学研究与进展》2015年第3期246-252,共7页Research & Progress of SSE

摘　　要：采用0.32μm CMOS-SOI工艺和D-mode 0.5μm GaAs pHEMT工艺设计了同一款双刀五掷射频开关,CMOS-SOI开关的设计应用了负压偏置电路和堆叠管子技术实现,GaAs pHEMT版本采用直流电压悬浮技术和三栅管与前馈电容技术实现。在0.9 GHz和1.9 GHz时,SOI和pHEMT开关的插入损耗分别为0.41dB/0.65dB和0.27dB/0.52dB,隔离度分别为26.9dB/25.7dB和24.1dB/31.3dB。两个版本在输入功率为28dBm且频率为1.9GHz时,二次、三次谐波均小于-49dBm。The double-pole five-throw(DP5T)switches designed by 0.32μm CMOS-SOI and D-mode 0.5μm GaAs pHEMT processes were presented.Negative voltage generator and multistacked FETs were employed in the design of the SOI DP5 Tswitch,while for the implementation of the pHEMT version,dc voltage floating and feed-forword capacitor(FFC)techniques were utilized.The insertion losses of SOI and pHEMT switches are 0.41dB/0.65 dB and 0.27dB/0.52 dB,respectively,at 0.9GHz/1.9GHz.The isolation of SOI and pHEMT switches are 26.9dB/25.7dB and 24.1dB/31.3dB,respectively,at 0.9GHz/1.9GHz.In both cases,the 2nd and3 rd harmonic power are less than-49 dBm at 1.9GHz with 28 dBm input power.

关 键 词：双刀五掷射频开关 绝缘硅 高电子迁移率晶体管 插入损耗 隔离度 功率处理能力 

分 类 号：TN386[电子电信—物理电子学]